A ferroelectric oxide made directly on silicon

Maitri P. Warusawithana, Cheng Cen, Charles R. Sleasman, Joseph C. Woicik, Yulan Li, Lena Fitting Kourkoutis, Jeffrey A. Klug, Hao Li, Philip Ryan, Li Peng Wang, Michael Bedzyk, David A. Muller, Long Qing Chen, Jeremy Levy, Darrell G. Schlom

Research output: Contribution to journalArticle

285 Citations (Scopus)

Abstract

Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO3 were observed at temperatures as high as 400 kelvin.

Original languageEnglish (US)
Pages (from-to)367-370
Number of pages4
JournalScience
Volume324
Issue number5925
DOIs
StatePublished - Apr 17 2009

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Silicon
Oxides
Silicon Dioxide
Semiconductors
Atomic Force Microscopy
Metals
Technology
Equipment and Supplies
Temperature
strontium titanium oxide

All Science Journal Classification (ASJC) codes

  • General

Cite this

Warusawithana, M. P., Cen, C., Sleasman, C. R., Woicik, J. C., Li, Y., Kourkoutis, L. F., ... Schlom, D. G. (2009). A ferroelectric oxide made directly on silicon. Science, 324(5925), 367-370. https://doi.org/10.1126/science.1169678
Warusawithana, Maitri P. ; Cen, Cheng ; Sleasman, Charles R. ; Woicik, Joseph C. ; Li, Yulan ; Kourkoutis, Lena Fitting ; Klug, Jeffrey A. ; Li, Hao ; Ryan, Philip ; Wang, Li Peng ; Bedzyk, Michael ; Muller, David A. ; Chen, Long Qing ; Levy, Jeremy ; Schlom, Darrell G. / A ferroelectric oxide made directly on silicon. In: Science. 2009 ; Vol. 324, No. 5925. pp. 367-370.
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author = "Warusawithana, {Maitri P.} and Cheng Cen and Sleasman, {Charles R.} and Woicik, {Joseph C.} and Yulan Li and Kourkoutis, {Lena Fitting} and Klug, {Jeffrey A.} and Hao Li and Philip Ryan and Wang, {Li Peng} and Michael Bedzyk and Muller, {David A.} and Chen, {Long Qing} and Jeremy Levy and Schlom, {Darrell G.}",
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Warusawithana, MP, Cen, C, Sleasman, CR, Woicik, JC, Li, Y, Kourkoutis, LF, Klug, JA, Li, H, Ryan, P, Wang, LP, Bedzyk, M, Muller, DA, Chen, LQ, Levy, J & Schlom, DG 2009, 'A ferroelectric oxide made directly on silicon', Science, vol. 324, no. 5925, pp. 367-370. https://doi.org/10.1126/science.1169678

A ferroelectric oxide made directly on silicon. / Warusawithana, Maitri P.; Cen, Cheng; Sleasman, Charles R.; Woicik, Joseph C.; Li, Yulan; Kourkoutis, Lena Fitting; Klug, Jeffrey A.; Li, Hao; Ryan, Philip; Wang, Li Peng; Bedzyk, Michael; Muller, David A.; Chen, Long Qing; Levy, Jeremy; Schlom, Darrell G.

In: Science, Vol. 324, No. 5925, 17.04.2009, p. 367-370.

Research output: Contribution to journalArticle

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AU - Sleasman, Charles R.

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AU - Kourkoutis, Lena Fitting

AU - Klug, Jeffrey A.

AU - Li, Hao

AU - Ryan, Philip

AU - Wang, Li Peng

AU - Bedzyk, Michael

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Warusawithana MP, Cen C, Sleasman CR, Woicik JC, Li Y, Kourkoutis LF et al. A ferroelectric oxide made directly on silicon. Science. 2009 Apr 17;324(5925):367-370. https://doi.org/10.1126/science.1169678