Abstract
This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.
| Original language | English (US) |
|---|---|
| Article number | 7031751 |
| Pages (from-to) | 304-309 |
| Number of pages | 6 |
| Journal | Proceedings of the IEEE International Conference on VLSI Design |
| Volume | 2015-February |
| Issue number | February |
| DOIs | |
| State | Published - Feb 4 2015 |
| Event | 28th International Conference on VLSI Design, VLSID 2015 - held concurrently with the 14th International Conference on Embedded Systems - Bangalore, India Duration: Jan 3 2015 → Jan 7 2015 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering