A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications

Unsuk Heo, Xueqing Li, Huichu Liu, Sumeet Kumar Gupta, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalConference article

15 Citations (Scopus)

Abstract

This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.

Original languageEnglish (US)
Article number7031751
Pages (from-to)304-309
Number of pages6
JournalProceedings of the IEEE International Conference on VLSI Design
Volume2015-February
Issue numberFebruary
DOIs
StatePublished - Feb 4 2015
Event28th International Conference on VLSI Design, VLSID 2015 - held concurrently with the 14th International Conference on Embedded Systems - Bangalore, India
Duration: Jan 3 2015Jan 7 2015

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Field effect transistors
Heterojunctions
Tunnels
Capacitance
Pumps
Electric potential
Conversion efficiency
Energy dissipation
Topology

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Heo, Unsuk ; Li, Xueqing ; Liu, Huichu ; Gupta, Sumeet Kumar ; Datta, Suman ; Narayanan, Vijaykrishnan. / A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications. In: Proceedings of the IEEE International Conference on VLSI Design. 2015 ; Vol. 2015-February, No. February. pp. 304-309.
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abstract = "This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4{\%} and 91.4{\%} power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.",
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A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications. / Heo, Unsuk; Li, Xueqing; Liu, Huichu; Gupta, Sumeet Kumar; Datta, Suman; Narayanan, Vijaykrishnan.

In: Proceedings of the IEEE International Conference on VLSI Design, Vol. 2015-February, No. February, 7031751, 04.02.2015, p. 304-309.

Research output: Contribution to journalConference article

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T1 - A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications

AU - Heo, Unsuk

AU - Li, Xueqing

AU - Liu, Huichu

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AU - Datta, Suman

AU - Narayanan, Vijaykrishnan

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AB - This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.

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