A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications

Unsuk Heo; Xueqing Li; Huichu Liu; Sumeet Gupta; Suman Datta; Vijaykrishnan Narayanan

doi:10.1109/VLSID.2015.58

A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications

Unsuk Heo, Xueqing Li, Huichu Liu, Sumeet Gupta, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.

Original language	English (US)
Article number	7031751
Pages (from-to)	304-309
Number of pages	6
Journal	Proceedings of the IEEE International Conference on VLSI Design
Volume	2015-February
Issue number	February
DOIs	https://doi.org/10.1109/VLSID.2015.58
State	Published - Feb 4 2015
Event	28th International Conference on VLSI Design, VLSID 2015 - held concurrently with the 14th International Conference on Embedded Systems - Bangalore, India Duration: Jan 3 2015 → Jan 7 2015

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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title = "A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications",

abstract = "This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.",

author = "Unsuk Heo and Xueqing Li and Huichu Liu and Sumeet Gupta and Suman Datta and Vijaykrishnan Narayanan",

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A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications. / Heo, Unsuk; Li, Xueqing; Liu, Huichu; Gupta, Sumeet; Datta, Suman; Narayanan, Vijaykrishnan.

In: Proceedings of the IEEE International Conference on VLSI Design, Vol. 2015-February, No. February, 7031751, 04.02.2015, p. 304-309.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

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AU - Heo, Unsuk

AU - Li, Xueqing

AU - Liu, Huichu

AU - Gupta, Sumeet

AU - Datta, Suman

AU - Narayanan, Vijaykrishnan

PY - 2015/2/4

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N2 - This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.

AB - This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.

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