A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications

Unsuk Heo, Xueqing Li, Huichu Liu, Sumeet Kumar Gupta, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalConference article

15 Scopus citations

Abstract

This paper presents a high-efficiency switched capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current conduction is utilized to reduce the reverse energy loss and to simplify the non-overlapping phase controlling. Furthermore, with unidirectional current conduction, an improved cross-coupled charge pump topology is proposed for higher voltage output and PCE. Simulation results show that the proposed HTFET charge pump with a 1.0 kΩ resistive load achieves 90.4% and 91.4% power conversion efficiency, and 0.37 V and 0.57 V DC output voltage, when the input voltage is 0.20 V and 0.30 V, respectively.

Original languageEnglish (US)
Article number7031751
Pages (from-to)304-309
Number of pages6
JournalProceedings of the IEEE International Conference on VLSI Design
Volume2015-February
Issue numberFebruary
DOIs
StatePublished - Feb 4 2015
Event28th International Conference on VLSI Design, VLSID 2015 - held concurrently with the 14th International Conference on Embedded Systems - Bangalore, India
Duration: Jan 3 2015Jan 7 2015

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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