A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

Shan Wu, Ming Shao, Quinn Burlingame, Xiangzhong Chen, Minren Lin, Kai Xiao, Q. M. Zhang

    Research output: Contribution to journalArticlepeer-review

    37 Scopus citations

    Abstract

    Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE-CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained.

    Original languageEnglish (US)
    Article number013301
    JournalApplied Physics Letters
    Volume102
    Issue number1
    DOIs
    StatePublished - Jan 7 2013

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

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