A hybrid method for fabrication of Au nanocrystals nonvolatile memory

Q. Wang, R. Jia, W. L. Li, Weihua Guan, Q. Liu, Y. Hu, S. B. Long, B. Q. Chen, M. Liu, T. C. Ye, W. S. Lu, L. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper demonstrates the integration of Au nanocrystals (NCs) into nonvolatile metal-oxide-semiconductor (MOS) with a hybrid method operated at room temperature. The comparison of structural and electrical characteristics between the hybrid Au NCs fabricated by chemical syntheses and film deposition Au NCs fabricated by rapid thermal annealing (RTA) was carried out. The size of the Au NCs formed by chemical method has been investigated more unique and small than the ones by the film deposition and RTA process. The electrical characteristics of MOS structure with two kinds of Au NCs has shown the larger memory window, lower P/E voltage and good retention time for the hybrid NCs due to its small diameter and low temperature process.

Original languageEnglish (US)
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages938-941
Number of pages4
DOIs
StatePublished - Dec 1 2007
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: Aug 2 2007Aug 5 2007

Publication series

Name2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Other

Other2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
CountryChina
CityHong Kong
Period8/2/078/5/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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