A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (fT) of 21.4 GHz, the maximum frequency of oscillations (fmax) of 32.6 GHz and the collector-emitter breakdown voltage (BVCEO) of 5.6 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry