A Low Gate Turn-OFF Impedance Driver for Suppressing Crosstalk of SiC MOSFET Based on Different Discrete Packages

Yan Li, Mei Liang, Jiangui Chen, Trillion Q. Zheng, Haobo Guo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Because of higher switching speed of silicon carbide MOSFET, the crosstalk in a phase-leg configuration will be more serious, which hinders the increase of switching frequency and lowers the reliability of the power electronic equipment. The displacement current of the gate-drain capacitor and the voltage drop on the common-source inductors can induce the crosstalk. In order to suppress the crosstalk, this paper proposes a novel gate driver, in which two additional capacitors are added to create the low turn-off gate impedance. With this proposed driver, the common-source parasitic inductor can be decoupled from the gate loop and the displacement current of the gate-drain capacitor can be bypassed. In addition, the operating principle and the parameters design are also analyzed. Finally, the crosstalk in the non-Kelvin package and the Kelvin package are tested by experiments, the validity of the analysis and the effectiveness for suppression the crosstalk are proved as well.

Original languageEnglish (US)
Article number8509568
Pages (from-to)353-365
Number of pages13
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume7
Issue number1
DOIs
StatePublished - Mar 1 2019

Fingerprint

Crosstalk
Capacitors
Switching frequency
Power electronics
Silicon carbide
Electronic equipment
Experiments

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

@article{46afcca697f14663a5c3cbdc7f599cf2,
title = "A Low Gate Turn-OFF Impedance Driver for Suppressing Crosstalk of SiC MOSFET Based on Different Discrete Packages",
abstract = "Because of higher switching speed of silicon carbide MOSFET, the crosstalk in a phase-leg configuration will be more serious, which hinders the increase of switching frequency and lowers the reliability of the power electronic equipment. The displacement current of the gate-drain capacitor and the voltage drop on the common-source inductors can induce the crosstalk. In order to suppress the crosstalk, this paper proposes a novel gate driver, in which two additional capacitors are added to create the low turn-off gate impedance. With this proposed driver, the common-source parasitic inductor can be decoupled from the gate loop and the displacement current of the gate-drain capacitor can be bypassed. In addition, the operating principle and the parameters design are also analyzed. Finally, the crosstalk in the non-Kelvin package and the Kelvin package are tested by experiments, the validity of the analysis and the effectiveness for suppression the crosstalk are proved as well.",
author = "Yan Li and Mei Liang and Jiangui Chen and Zheng, {Trillion Q.} and Haobo Guo",
year = "2019",
month = "3",
day = "1",
doi = "10.1109/JESTPE.2018.2877968",
language = "English (US)",
volume = "7",
pages = "353--365",
journal = "IEEE Journal of Emerging and Selected Topics in Power Electronics",
issn = "2168-6777",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

A Low Gate Turn-OFF Impedance Driver for Suppressing Crosstalk of SiC MOSFET Based on Different Discrete Packages. / Li, Yan; Liang, Mei; Chen, Jiangui; Zheng, Trillion Q.; Guo, Haobo.

In: IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 7, No. 1, 8509568, 01.03.2019, p. 353-365.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A Low Gate Turn-OFF Impedance Driver for Suppressing Crosstalk of SiC MOSFET Based on Different Discrete Packages

AU - Li, Yan

AU - Liang, Mei

AU - Chen, Jiangui

AU - Zheng, Trillion Q.

AU - Guo, Haobo

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Because of higher switching speed of silicon carbide MOSFET, the crosstalk in a phase-leg configuration will be more serious, which hinders the increase of switching frequency and lowers the reliability of the power electronic equipment. The displacement current of the gate-drain capacitor and the voltage drop on the common-source inductors can induce the crosstalk. In order to suppress the crosstalk, this paper proposes a novel gate driver, in which two additional capacitors are added to create the low turn-off gate impedance. With this proposed driver, the common-source parasitic inductor can be decoupled from the gate loop and the displacement current of the gate-drain capacitor can be bypassed. In addition, the operating principle and the parameters design are also analyzed. Finally, the crosstalk in the non-Kelvin package and the Kelvin package are tested by experiments, the validity of the analysis and the effectiveness for suppression the crosstalk are proved as well.

AB - Because of higher switching speed of silicon carbide MOSFET, the crosstalk in a phase-leg configuration will be more serious, which hinders the increase of switching frequency and lowers the reliability of the power electronic equipment. The displacement current of the gate-drain capacitor and the voltage drop on the common-source inductors can induce the crosstalk. In order to suppress the crosstalk, this paper proposes a novel gate driver, in which two additional capacitors are added to create the low turn-off gate impedance. With this proposed driver, the common-source parasitic inductor can be decoupled from the gate loop and the displacement current of the gate-drain capacitor can be bypassed. In addition, the operating principle and the parameters design are also analyzed. Finally, the crosstalk in the non-Kelvin package and the Kelvin package are tested by experiments, the validity of the analysis and the effectiveness for suppression the crosstalk are proved as well.

UR - http://www.scopus.com/inward/record.url?scp=85055726891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055726891&partnerID=8YFLogxK

U2 - 10.1109/JESTPE.2018.2877968

DO - 10.1109/JESTPE.2018.2877968

M3 - Article

AN - SCOPUS:85055726891

VL - 7

SP - 353

EP - 365

JO - IEEE Journal of Emerging and Selected Topics in Power Electronics

JF - IEEE Journal of Emerging and Selected Topics in Power Electronics

SN - 2168-6777

IS - 1

M1 - 8509568

ER -