A low-temperature firing thick film capacttor material based on lead iron niobate/tungstate

T. C. Reiley, J. V. Badding, D. A. Payne, D. A. Chance

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13 Scopus citations

Abstract

The preparation of solid solution perovskite 70% Pb(Fe 1 2Nb 1 2)O3-30%Pb(Fe 2 3W 1 3)O3 is described for use as a thick film capacitor on ceramic chip carriers. The limited densification at the temperature range of interest (850 - 900°C) requires the addition of a sintering aid. It is shown that a small addition of PbO(7 vol.%) is sufficient to promote densification of this material and maintain a dielectric constant exceeding 4000 for a fired thick film. Other electrical and physical properties of this material are described.

Original languageEnglish (US)
Pages (from-to)1543-1549
Number of pages7
JournalMaterials Research Bulletin
Volume19
Issue number12
DOIs
StatePublished - Dec 1984

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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