A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates

Aleksandr V. Plokhikh, Iryna S. Golovina, Matthias Falmbigl, Igor A. Karateev, Alexander L. Vasiliev, Jason Lapano, Roman Engel-Herbert, Jonathan E. Spanier

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We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3deposited by hybrid molecular beam epitaxy. ALD film growth was carried out at 360 °C, which is significantly lower than the typical deposition temperatures for epitaxial perovskite thin films. The high control over the stacking sequence of different constituents is demonstrated in a series of (BaTiO3)m/(SrTiO3)nsuperlattices with variousm/ncycle ratios. All superlattice structures were coherently strained to the virtual substrate layer of SrTiO3on Si. Irrespective of them/nsuperlattice sequence, SrTiO3sublayers retain slight compressive strain which is transmitted to the BaTiO3layers.

Original languageEnglish (US)
Pages (from-to)13115-13122
Number of pages8
JournalJournal of Materials Chemistry C
Issue number38
StatePublished - Oct 14 2021

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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