A low-voltage low-power LC oscillator using the diode-connected SymFET

Xueqing Li, Wei Yu Tsai, Huichu Liu, Suman Datta, Vijaykrishnan Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, a low-voltage low-power LC-tank oscillator design using the symmetric graphene tunneling field-effect transistor (SymFET) diode is presented. The SymFET takes advantage of the resonant current tunneling through two graphene layers, with a large current peak exhibiting negative differential resistance (NDR) when the drain-to-source voltage aligns the Dirac point. A Verilog-A SymFET model is presented with noise performance for circuit design and evaluation. The NDR phenomenon of the diode-connected SymFET is further explored, and oscillator design considerations are discussed for performance optimization. Simulation results show that the proposed SymFET 3.05 GHz oscillator has a simulated phase noise of -117 dBC/Hz at 1.0 MHz offset, with a power consumption of only 0.23 mW from a 0.30 V supply.

Original languageEnglish (US)
Title of host publicationProceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI
PublisherIEEE Computer Society
Pages302-307
Number of pages6
ISBN (Electronic)9781479937639
DOIs
StatePublished - Sep 18 2014
Event2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 - Tampa, United States
Duration: Jul 9 2014Jul 11 2014

Other

Other2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014
CountryUnited States
CityTampa
Period7/9/147/11/14

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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