A magnetoelectric logic gate

Jia Mian Hu, Zheng Li, Y. H. Lin, C. W. Nan

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We present a strain-mediated magnetoelectric logic (ME-logic) gate, with electric field directly used as the logical input/output. The basic building block of the ME-logic device is a magnetic tunnel junction (MTJ) attached to a ferroelectric layer, in which the resistance of the MTJ unit can be modulated by an electric field applied to the ferroelectric layer. The ME-logic device combines the advantage of conventional MTJ-based logic devices, while avoiding their problems associated with generating high local magnetic fields required in the switching circuits. Two possible schemes of such ME-logic devices are introduced, i.e., either operated as a logic NOR, NOT or NAND gate, or selected to realize the logical NOR, NOT or NAND function at run-time.

Original languageEnglish (US)
Pages (from-to)106-108
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume4
Issue number5-6
DOIs
StatePublished - Jun 2010

Fingerprint

Logic devices
Logic gates
logic
Tunnel junctions
tunnel junctions
Ferroelectric materials
Electric fields
Switching circuits
switching circuits
electric fields
Magnetic fields
output
magnetic fields

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hu, Jia Mian ; Li, Zheng ; Lin, Y. H. ; Nan, C. W. / A magnetoelectric logic gate. In: Physica Status Solidi - Rapid Research Letters. 2010 ; Vol. 4, No. 5-6. pp. 106-108.
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Hu, JM, Li, Z, Lin, YH & Nan, CW 2010, 'A magnetoelectric logic gate', Physica Status Solidi - Rapid Research Letters, vol. 4, no. 5-6, pp. 106-108. https://doi.org/10.1002/pssr.201004048

A magnetoelectric logic gate. / Hu, Jia Mian; Li, Zheng; Lin, Y. H.; Nan, C. W.

In: Physica Status Solidi - Rapid Research Letters, Vol. 4, No. 5-6, 06.2010, p. 106-108.

Research output: Contribution to journalArticle

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