A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport

Corey J. Cochrane, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) are extremely useful techniques that are capable of defect detection in semiconductor structures and fully processed devices, respectively. The complexity of conventional EPR and EDMR spectrometers involves utilization of strong (>3000 G) highly uniform magnetic fields (B0) and high frequency (typically 9 GHz) oscillating magnetic fields (B1) or higher. These components are typically expensive and heavy. In this study, we directly demonstrate that, in the absence of both an oscillating magnetic field and a large static magnetic field, spin dependent recombination (SDR) and spin dependent tunneling (SDT) can be detected at zero magnetic field. In this zero-field detection scheme, hyperfine interactions can be detected which allow for the physical identification of the defects responsible for SDR and SDT. However, we sacrifice the evaluation of a resonance parameter, the g-value. We observe the zero-field phenomenon in multiple solid state electronic components including MOSFETs, BJTs, diodes, and capacitors suggesting its usefulness for semiconducting manufacturers to incorporate simple automated low-field/zero-field EDMR spectrometers into wafer fabrication/probing equipment to study the defects in solid-state electronics during fabrication. Because only very low fields are required, low field EDMR can be performed easily and inexpensively.

Original languageEnglish (US)
Title of host publication2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012
Pages45-47
Number of pages3
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE International Integrated Reliability Workshop, IIRW 2012 - South Lake Tahoe, CA, United States
Duration: Oct 14 2012Oct 18 2012

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2012 IEEE International Integrated Reliability Workshop, IIRW 2012
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/14/1210/18/12

Fingerprint

Magnetic fields
Magnetic resonance spectrometers
Defects
Electronic states
Magnetic resonance
Paramagnetic resonance
Fabrication
Diodes
Capacitors
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Cochrane, C. J., & Lenahan, P. M. (2012). A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport. In 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012 (pp. 45-47). [6468917] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2012.6468917
Cochrane, Corey J. ; Lenahan, Patrick M. / A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport. 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012. 2012. pp. 45-47 (IEEE International Integrated Reliability Workshop Final Report).
@inproceedings{2e6a3210c85140068346a5cf3d200855,
title = "A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport",
abstract = "Electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) are extremely useful techniques that are capable of defect detection in semiconductor structures and fully processed devices, respectively. The complexity of conventional EPR and EDMR spectrometers involves utilization of strong (>3000 G) highly uniform magnetic fields (B0) and high frequency (typically 9 GHz) oscillating magnetic fields (B1) or higher. These components are typically expensive and heavy. In this study, we directly demonstrate that, in the absence of both an oscillating magnetic field and a large static magnetic field, spin dependent recombination (SDR) and spin dependent tunneling (SDT) can be detected at zero magnetic field. In this zero-field detection scheme, hyperfine interactions can be detected which allow for the physical identification of the defects responsible for SDR and SDT. However, we sacrifice the evaluation of a resonance parameter, the g-value. We observe the zero-field phenomenon in multiple solid state electronic components including MOSFETs, BJTs, diodes, and capacitors suggesting its usefulness for semiconducting manufacturers to incorporate simple automated low-field/zero-field EDMR spectrometers into wafer fabrication/probing equipment to study the defects in solid-state electronics during fabrication. Because only very low fields are required, low field EDMR can be performed easily and inexpensively.",
author = "Cochrane, {Corey J.} and Lenahan, {Patrick M.}",
year = "2012",
month = "12",
day = "1",
doi = "10.1109/IIRW.2012.6468917",
language = "English (US)",
isbn = "9781467327527",
series = "IEEE International Integrated Reliability Workshop Final Report",
pages = "45--47",
booktitle = "2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012",

}

Cochrane, CJ & Lenahan, PM 2012, A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport. in 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012., 6468917, IEEE International Integrated Reliability Workshop Final Report, pp. 45-47, 2012 IEEE International Integrated Reliability Workshop, IIRW 2012, South Lake Tahoe, CA, United States, 10/14/12. https://doi.org/10.1109/IIRW.2012.6468917

A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport. / Cochrane, Corey J.; Lenahan, Patrick M.

2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012. 2012. p. 45-47 6468917 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport

AU - Cochrane, Corey J.

AU - Lenahan, Patrick M.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) are extremely useful techniques that are capable of defect detection in semiconductor structures and fully processed devices, respectively. The complexity of conventional EPR and EDMR spectrometers involves utilization of strong (>3000 G) highly uniform magnetic fields (B0) and high frequency (typically 9 GHz) oscillating magnetic fields (B1) or higher. These components are typically expensive and heavy. In this study, we directly demonstrate that, in the absence of both an oscillating magnetic field and a large static magnetic field, spin dependent recombination (SDR) and spin dependent tunneling (SDT) can be detected at zero magnetic field. In this zero-field detection scheme, hyperfine interactions can be detected which allow for the physical identification of the defects responsible for SDR and SDT. However, we sacrifice the evaluation of a resonance parameter, the g-value. We observe the zero-field phenomenon in multiple solid state electronic components including MOSFETs, BJTs, diodes, and capacitors suggesting its usefulness for semiconducting manufacturers to incorporate simple automated low-field/zero-field EDMR spectrometers into wafer fabrication/probing equipment to study the defects in solid-state electronics during fabrication. Because only very low fields are required, low field EDMR can be performed easily and inexpensively.

AB - Electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) are extremely useful techniques that are capable of defect detection in semiconductor structures and fully processed devices, respectively. The complexity of conventional EPR and EDMR spectrometers involves utilization of strong (>3000 G) highly uniform magnetic fields (B0) and high frequency (typically 9 GHz) oscillating magnetic fields (B1) or higher. These components are typically expensive and heavy. In this study, we directly demonstrate that, in the absence of both an oscillating magnetic field and a large static magnetic field, spin dependent recombination (SDR) and spin dependent tunneling (SDT) can be detected at zero magnetic field. In this zero-field detection scheme, hyperfine interactions can be detected which allow for the physical identification of the defects responsible for SDR and SDT. However, we sacrifice the evaluation of a resonance parameter, the g-value. We observe the zero-field phenomenon in multiple solid state electronic components including MOSFETs, BJTs, diodes, and capacitors suggesting its usefulness for semiconducting manufacturers to incorporate simple automated low-field/zero-field EDMR spectrometers into wafer fabrication/probing equipment to study the defects in solid-state electronics during fabrication. Because only very low fields are required, low field EDMR can be performed easily and inexpensively.

UR - http://www.scopus.com/inward/record.url?scp=84875092859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875092859&partnerID=8YFLogxK

U2 - 10.1109/IIRW.2012.6468917

DO - 10.1109/IIRW.2012.6468917

M3 - Conference contribution

AN - SCOPUS:84875092859

SN - 9781467327527

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 45

EP - 47

BT - 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012

ER -

Cochrane CJ, Lenahan PM. A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport. In 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012. 2012. p. 45-47. 6468917. (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2012.6468917