A model of hole trapping in SiO2 films on silicon

P. M. Lenahan, J. F. Conley, B. D. Wallace

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.

Original languageEnglish (US)
Pages (from-to)6822-6824
Number of pages3
JournalJournal of Applied Physics
Volume81
Issue number10
DOIs
StatePublished - May 15 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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