A model of hole trapping in SiO2 films on silicon

Patrick M. Lenahan, J. F. Conley, B. D. Wallace

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.

Original languageEnglish (US)
Pages (from-to)6822-6824
Number of pages3
JournalJournal of Applied Physics
Volume81
Issue number10
DOIs
StatePublished - May 15 1997

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lenahan, Patrick M. ; Conley, J. F. ; Wallace, B. D. / A model of hole trapping in SiO2 films on silicon. In: Journal of Applied Physics. 1997 ; Vol. 81, No. 10. pp. 6822-6824.
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A model of hole trapping in SiO2 films on silicon. / Lenahan, Patrick M.; Conley, J. F.; Wallace, B. D.

In: Journal of Applied Physics, Vol. 81, No. 10, 15.05.1997, p. 6822-6824.

Research output: Contribution to journalArticle

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