A model of hole trapping in SiO2 films on silicon

P. M. Lenahan; J. F. Conley; B. D. Wallace

doi:10.1063/1.365438

A model of hole trapping in SiO₂ films on silicon

P. M. Lenahan, J. F. Conley, B. D. Wallace

Research output: Contribution to journal › Article › peer-review

39 Citations (SciVal)

Abstract

We demonstrate that hole trap densities and hole trapping in SiO₂ films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.

Original language	English (US)
Pages (from-to)	6822-6824
Number of pages	3
Journal	Journal of Applied Physics
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.365438
State	Published - May 15 1997

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.365438

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title = "A model of hole trapping in SiO2 films on silicon",

abstract = "We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.",

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N2 - We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.

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A model of hole trapping in SiO₂ films on silicon

Abstract

All Science Journal Classification (ASJC) codes

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