A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass

C. Zhang, G. Hatipoglu, Srinivas A. Tadigadapa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the etching of borosilicate glass substrates in a conventional and modified inductively coupled plasma - reactive ion etch (ICP-RIE) tool. We present the etch rates and surface roughness of borosilicate glass in various fluorine based plasmas using C4F8, SF6, Ar, NF3, and H2O gases. In the conventional ICP-RIE etching mode an etch rate of 0.55 μm/min at a rms surface roughness of 25 nm was obtained at C4F8, SF6 flow rates of 5 sccm, O2 flow rate of 50 sccm, 2000 W of ICP power, 475 W of substrate power. A maximum etch rate of 0.67μm/min was obtained at a high rms surface roughness of 450 nm by increasing flow rate of C4F8 to 50 sccm. Using the modified ICP-RIE system consisting of a gas diffuser ring clamped to the substrate holder, the physical component of the etching was considerably reduced and we have been able to achieve etch rates ∼0.72 μm/min with surface smoothness of ∼1 nm for borosilicate glass and fused silica respectively after 5 minutes etches.

Original languageEnglish (US)
Title of host publication2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages592-595
Number of pages4
ISBN (Electronic)9781479989553
DOIs
StatePublished - Aug 5 2015
Event18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 - Anchorage, United States
Duration: Jun 21 2015Jun 25 2015

Publication series

Name2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015

Other

Other18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
CountryUnited States
CityAnchorage
Period6/21/156/25/15

Fingerprint

Borosilicate glass
silica glass
Inductively coupled plasma
Fused silica
Etching
borosilicate glass
Surface roughness
Flow rate
high speed
etching
surface roughness
flow velocity
Substrates
Plasma etching
Reactive ion etching
Ions
Gases
Fluorine
ions
diffusers

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Zhang, C., Hatipoglu, G., & Tadigadapa, S. A. (2015). A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 (pp. 592-595). [7180993] (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2015.7180993
Zhang, C. ; Hatipoglu, G. ; Tadigadapa, Srinivas A. / A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass. 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 592-595 (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015).
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abstract = "We report on the etching of borosilicate glass substrates in a conventional and modified inductively coupled plasma - reactive ion etch (ICP-RIE) tool. We present the etch rates and surface roughness of borosilicate glass in various fluorine based plasmas using C4F8, SF6, Ar, NF3, and H2O gases. In the conventional ICP-RIE etching mode an etch rate of 0.55 μm/min at a rms surface roughness of 25 nm was obtained at C4F8, SF6 flow rates of 5 sccm, O2 flow rate of 50 sccm, 2000 W of ICP power, 475 W of substrate power. A maximum etch rate of 0.67μm/min was obtained at a high rms surface roughness of 450 nm by increasing flow rate of C4F8 to 50 sccm. Using the modified ICP-RIE system consisting of a gas diffuser ring clamped to the substrate holder, the physical component of the etching was considerably reduced and we have been able to achieve etch rates ∼0.72 μm/min with surface smoothness of ∼1 nm for borosilicate glass and fused silica respectively after 5 minutes etches.",
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Zhang, C, Hatipoglu, G & Tadigadapa, SA 2015, A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass. in 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015., 7180993, 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Institute of Electrical and Electronics Engineers Inc., pp. 592-595, 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Anchorage, United States, 6/21/15. https://doi.org/10.1109/TRANSDUCERS.2015.7180993

A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass. / Zhang, C.; Hatipoglu, G.; Tadigadapa, Srinivas A.

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 592-595 7180993 (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass

AU - Zhang, C.

AU - Hatipoglu, G.

AU - Tadigadapa, Srinivas A.

PY - 2015/8/5

Y1 - 2015/8/5

N2 - We report on the etching of borosilicate glass substrates in a conventional and modified inductively coupled plasma - reactive ion etch (ICP-RIE) tool. We present the etch rates and surface roughness of borosilicate glass in various fluorine based plasmas using C4F8, SF6, Ar, NF3, and H2O gases. In the conventional ICP-RIE etching mode an etch rate of 0.55 μm/min at a rms surface roughness of 25 nm was obtained at C4F8, SF6 flow rates of 5 sccm, O2 flow rate of 50 sccm, 2000 W of ICP power, 475 W of substrate power. A maximum etch rate of 0.67μm/min was obtained at a high rms surface roughness of 450 nm by increasing flow rate of C4F8 to 50 sccm. Using the modified ICP-RIE system consisting of a gas diffuser ring clamped to the substrate holder, the physical component of the etching was considerably reduced and we have been able to achieve etch rates ∼0.72 μm/min with surface smoothness of ∼1 nm for borosilicate glass and fused silica respectively after 5 minutes etches.

AB - We report on the etching of borosilicate glass substrates in a conventional and modified inductively coupled plasma - reactive ion etch (ICP-RIE) tool. We present the etch rates and surface roughness of borosilicate glass in various fluorine based plasmas using C4F8, SF6, Ar, NF3, and H2O gases. In the conventional ICP-RIE etching mode an etch rate of 0.55 μm/min at a rms surface roughness of 25 nm was obtained at C4F8, SF6 flow rates of 5 sccm, O2 flow rate of 50 sccm, 2000 W of ICP power, 475 W of substrate power. A maximum etch rate of 0.67μm/min was obtained at a high rms surface roughness of 450 nm by increasing flow rate of C4F8 to 50 sccm. Using the modified ICP-RIE system consisting of a gas diffuser ring clamped to the substrate holder, the physical component of the etching was considerably reduced and we have been able to achieve etch rates ∼0.72 μm/min with surface smoothness of ∼1 nm for borosilicate glass and fused silica respectively after 5 minutes etches.

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U2 - 10.1109/TRANSDUCERS.2015.7180993

DO - 10.1109/TRANSDUCERS.2015.7180993

M3 - Conference contribution

AN - SCOPUS:84955505720

T3 - 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015

SP - 592

EP - 595

BT - 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Zhang C, Hatipoglu G, Tadigadapa SA. A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 592-595. 7180993. (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015). https://doi.org/10.1109/TRANSDUCERS.2015.7180993