The first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET) was presented. The photovoltage developed across the bR was applied across the gate of the FET along with the conversion of the large photovoltage to a photocurrent. Molecular beam epitaxy (MBE) was employed for the growth of GaAs based MODFET heterostructure while the 1-μm gate transistors were made by standard photolithography, wet etching and metalization techniques. The sensors were assumed to be very useful for imaging arrays and artificial vision applications.
|Original language||English (US)|
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - Jan 1 2001|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering