A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver

Jian Xu, P. Bhattacharya, G. Varo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET) was presented. The photovoltage developed across the bR was applied across the gate of the FET along with the conversion of the large photovoltage to a photocurrent. Molecular beam epitaxy (MBE) was employed for the growth of GaAs based MODFET heterostructure while the 1-μm gate transistors were made by standard photolithography, wet etching and metalization techniques. The sensors were assumed to be very useful for imaging arrays and artificial vision applications.

Original languageEnglish (US)
Pages (from-to)833-834
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
DOIs
StatePublished - Jan 1 2001

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Bacteriorhodopsins
High electron mobility transistors
Gates (transistor)
Wet etching
Photolithography
Field effect transistors
Photodetectors
Photocurrents
Molecular beam epitaxy
Computer vision
Heterojunctions
Transistors
Imaging techniques
Sensors
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver. / Xu, Jian; Bhattacharya, P.; Varo, G.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 01.01.2001, p. 833-834.

Research output: Contribution to journalArticle

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