A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy

James P. Ashton, Stephen J. Moxim, Patrick M. Lenahan, Colin G. McKay, Ryan J. Waskiewicz, Kenneth J. Myers, Michael E. Flatte, Nicholas J. Harmon, Chadwin D. Young

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Abstract

We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechanisms of radiation damage in 3-D integrated circuits. In our study, we explore radiation damage in structures relevant to 3-D integrated circuits, but not on 3-D test structures themselves. Five structures of great technological importance to 3-D integrated circuits are investigated. We utilize both NZFMR and electrically detected magnetic resonance to investigate radiation effects in these structures. The structures involved in this paper are planar silicon metal-oxide-semiconductor field-effect transistors, silicon-germanium alloy-based transistors, fin-based transistors, silicon dioxide-based flowable oxides, and low-k dielectrics. Our study indicates that NZFMR has great potential in radiation damage studies, with exceptional promise in systems in which more conventional resonance is not possible.

Original languageEnglish (US)
Article number8565893
Pages (from-to)428-436
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume66
Issue number1
DOIs
StatePublished - Jan 1 2019

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Ashton, J. P., Moxim, S. J., Lenahan, P. M., McKay, C. G., Waskiewicz, R. J., Myers, K. J., Flatte, M. E., Harmon, N. J., & Young, C. D. (2019). A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy. IEEE Transactions on Nuclear Science, 66(1), 428-436. [8565893]. https://doi.org/10.1109/TNS.2018.2885300