A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy

We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechanisms of radiation damage in 3-D integrated circuits. In our study, we explore radiation damage in structures relevant to 3-D integrated circuits, but not on 3-D test structures themselves. Five structures of great technological importance to 3-D integrated circuits are investigated. We utilize both NZFMR and electrically detected magnetic resonance to investigate radiation effects in these structures. The structures involved in this paper are planar silicon metal-oxide-semiconductor field-effect transistors, silicon-germanium alloy-based transistors, fin-based transistors, silicon dioxide-based flowable oxides, and low-k dielectrics. Our study indicates that NZFMR has great potential in radiation damage studies, with exceptional promise in systems in which more conventional resonance is not possible.