A new CVD reaction for atomic layer deposition of silicon

C. M. Chiang, J. E. Rowe, R. A. Malic, A. Sen, M. L. Steigerwald, A. P. Mills

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have investigated a new reaction pathway for atomic layer deposition of Si on various metal and semiconductor substrates using a novel organosilicon compound, Si(C 6 H 10 ) 2 , which has a central Si atom with two identical 5-fold hydrocarbon rings. Upon reaction with the substrate the hydrocarbon rings are expected to transform into dimethylbutadiene (C 6 H 10 ), which is very volatile and should readily desorb, thereby leaving the Si core atoms adsorbed on the surface. High purity vapor sources of Si(C 6 H 10 ) 2 were prepared and introduced into a multi-technique ultrahigh vacuum (UHV) chamber. Si(C 6 H 10 ) 2 molecule was initially physisorbed at liquid nitrogen temperature (∼ 100 K) at a pressure of 1.0 × 10 -6 Torr to either monolayer or multi-layer thickness on substrates. Infrared reflection-absorption spectroscopy (IRAS) and core-level X-ray photoelectron spectroscopy (XPS) of the Si(2p) have shown evidence of an adsorbed 'silylene' species formed at 200 K due to the loss of one 5-fold hydrocarbon ring. Thermal desorption data support the dissociation of the molecule and the liberation of the hydrocarbon reaction product, dimethylbutadiene. However, upon further heating the 'silylene' species decomposes non-selectively to produce both silicon deposition and carbon contamination.

Original languageEnglish (US)
Pages (from-to)189-196
Number of pages8
JournalApplied Surface Science
Volume107
DOIs
StatePublished - Nov 1996

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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