A grounded lamination gate (GLG) structure for high-κ gate-dielectric MOSFETs is proposed, with grounded metal plates in the spacer oxide region. Two-dimensional device simulations performed on the new structure demonstrate a significant improvement with respect to the threshold voltage roll-off with increasing gate-dielectric constant (due to parasitic internal fringe capacitance), keeping the equivalent oxide thickness same. A simple fabrication procedure for the GLG MOSFET is also presented.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials