A new technique for analyzing defects in silicon carbide devices: Electrically detected electron nuclear double resonance

Ryan J. Waskiewicz, Brian R. Manning, Duane J. McCrory, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show that electrically detected electron nuclear double resonance (EDENDOR) can be detected with relatively high signal-to-noise ratios in fully processed 4H-SiC bipolar junction transistors (BJTs). We observe EDENDOR of nitrogen interacting with recombination center defects in the depletion region of forward-biased emitter-base junctions of these devices at room temperature. Our results indicate that EDENDOR has great potential in the investigation of SiC-based devices specifically, as well as in the investigation of solid-state devices based upon other material systems.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2019
EditorsHiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
PublisherTrans Tech Publications Ltd
Pages306-313
Number of pages8
ISBN (Print)9783035715798
DOIs
StatePublished - 2020
Event18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan
Duration: Sep 29 2019Oct 4 2019

Publication series

NameMaterials Science Forum
Volume1004 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
CountryJapan
CityKyoto
Period9/29/1910/4/19

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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