A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

Thomas Aichinger, Patrick M. Lenahan, Blair Richard Tuttle, Dethard Peters

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen.

Original languageEnglish (US)
Article number112113
JournalApplied Physics Letters
Volume100
Issue number11
DOIs
StatePublished - Mar 12 2012

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nitrogen
defects
ions
implantation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study. / Aichinger, Thomas; Lenahan, Patrick M.; Tuttle, Blair Richard; Peters, Dethard.

In: Applied Physics Letters, Vol. 100, No. 11, 112113, 12.03.2012.

Research output: Contribution to journalArticle

TY - JOUR

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