@article{6d6b024234b347c096fc23efdf697e00,
title = "A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study",
abstract = "Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen.",
author = "Thomas Aichinger and Lenahan, {Patrick M.} and Tuttle, {Blair R.} and Dethard Peters",
note = "Funding Information: Blair Tuttle was supported by the Penn State Collaboration Fellowship and by the National Science Foundation via Grant No. DMR-0907385. The work at Penn State was also supported in part by the Infineon Technologies, Austria, the U.S. Army Research Laboratory, and through General Electric under the U.S. Department of Commerce under Award No. NIST 60NANB10D109. ",
year = "2012",
month = mar,
day = "12",
doi = "10.1063/1.3695330",
language = "English (US)",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}