A novel approach to radiographic image resolution gauge fabrication

C. L. Trivelpiece, B. L. Babcox, J. S. Brenizer, Douglas Edward Wolfe, James Hansell Adair

Research output: Contribution to journalArticle

Abstract

A resolution gauge was fabricated for measuring the spatial resolution of radiographic imaging systems. Silicon wafers, 100 mm 〈1 0 0〉, were patterned using standard contact lithography and the patterned features were etched using deep reactive ion etching (DRIE). The smallest features were 5 μm wide line pairs. The resulting etched trenches included aspect ratios of up to 10:1 and were 40.6±0.2 μm deep. The etch rate was 2.7 μm/min for the reported etch depth. A Gd2O3 nanopowder was dispersed into a slurry using Darvan C and water as the dispersant and solvent, respectively. A rapid infiltration method was used to fill the etched trenches with the slurry. Neutron and X-ray radiographs of the resolution gauge and the results demonstrate that the prototype gauge would be a suitable standard for measuring the spatial resolution of both X-ray and neutron radiography systems.

Original languageEnglish (US)
Pages (from-to)135-141
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume646
Issue number1
DOIs
StatePublished - Aug 1 2011

Fingerprint

image resolution
Image resolution
Gages
Fabrication
fabrication
spatial resolution
X ray radiography
Neutron radiography
neutron radiography
Reactive ion etching
Optical resolving power
radiography
infiltration
Silicon wafers
Infiltration
Imaging systems
Lithography
aspect ratio
Aspect ratio
Neutrons

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

@article{25c05939364f4308900c8b42ac49246f,
title = "A novel approach to radiographic image resolution gauge fabrication",
abstract = "A resolution gauge was fabricated for measuring the spatial resolution of radiographic imaging systems. Silicon wafers, 100 mm 〈1 0 0〉, were patterned using standard contact lithography and the patterned features were etched using deep reactive ion etching (DRIE). The smallest features were 5 μm wide line pairs. The resulting etched trenches included aspect ratios of up to 10:1 and were 40.6±0.2 μm deep. The etch rate was 2.7 μm/min for the reported etch depth. A Gd2O3 nanopowder was dispersed into a slurry using Darvan C and water as the dispersant and solvent, respectively. A rapid infiltration method was used to fill the etched trenches with the slurry. Neutron and X-ray radiographs of the resolution gauge and the results demonstrate that the prototype gauge would be a suitable standard for measuring the spatial resolution of both X-ray and neutron radiography systems.",
author = "Trivelpiece, {C. L.} and Babcox, {B. L.} and Brenizer, {J. S.} and Wolfe, {Douglas Edward} and Adair, {James Hansell}",
year = "2011",
month = "8",
day = "1",
doi = "10.1016/j.nima.2011.04.039",
language = "English (US)",
volume = "646",
pages = "135--141",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - A novel approach to radiographic image resolution gauge fabrication

AU - Trivelpiece, C. L.

AU - Babcox, B. L.

AU - Brenizer, J. S.

AU - Wolfe, Douglas Edward

AU - Adair, James Hansell

PY - 2011/8/1

Y1 - 2011/8/1

N2 - A resolution gauge was fabricated for measuring the spatial resolution of radiographic imaging systems. Silicon wafers, 100 mm 〈1 0 0〉, were patterned using standard contact lithography and the patterned features were etched using deep reactive ion etching (DRIE). The smallest features were 5 μm wide line pairs. The resulting etched trenches included aspect ratios of up to 10:1 and were 40.6±0.2 μm deep. The etch rate was 2.7 μm/min for the reported etch depth. A Gd2O3 nanopowder was dispersed into a slurry using Darvan C and water as the dispersant and solvent, respectively. A rapid infiltration method was used to fill the etched trenches with the slurry. Neutron and X-ray radiographs of the resolution gauge and the results demonstrate that the prototype gauge would be a suitable standard for measuring the spatial resolution of both X-ray and neutron radiography systems.

AB - A resolution gauge was fabricated for measuring the spatial resolution of radiographic imaging systems. Silicon wafers, 100 mm 〈1 0 0〉, were patterned using standard contact lithography and the patterned features were etched using deep reactive ion etching (DRIE). The smallest features were 5 μm wide line pairs. The resulting etched trenches included aspect ratios of up to 10:1 and were 40.6±0.2 μm deep. The etch rate was 2.7 μm/min for the reported etch depth. A Gd2O3 nanopowder was dispersed into a slurry using Darvan C and water as the dispersant and solvent, respectively. A rapid infiltration method was used to fill the etched trenches with the slurry. Neutron and X-ray radiographs of the resolution gauge and the results demonstrate that the prototype gauge would be a suitable standard for measuring the spatial resolution of both X-ray and neutron radiography systems.

UR - http://www.scopus.com/inward/record.url?scp=79958219295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958219295&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2011.04.039

DO - 10.1016/j.nima.2011.04.039

M3 - Article

AN - SCOPUS:79958219295

VL - 646

SP - 135

EP - 141

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1

ER -