A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET

Jiangui Chen, Yan Li, Mei Liang, R. Kennel, Jiayu Liu, Haobo Guo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiC MOSFET has faster switching speed, lower RDs(on), and higher breakdown voltage when compared with Si MOSFET. Therefore., SiC MOSFET can work at work at higher frequencies., even Mhz. However., the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper., and a gate driver with the variable gate resistance and the variable driving voltage and is proposed to suppress OVOC of SiC MOSFET. This paper analyzes the working mode of the proposed gate driver (PGD). The PGD can effectively suppress the OVOC of SiC MOSFET. Finally., the effectiveness of the PGD is verified based on a double-pulse test platform.

Original languageEnglish (US)
Title of host publicationICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages147-153
Number of pages7
ISBN (Electronic)9788957083130
StatePublished - May 1 2019
Event10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia - Busan, Korea, Republic of
Duration: May 27 2019May 30 2019

Publication series

NameICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia

Conference

Conference10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia
CountryKorea, Republic of
CityBusan
Period5/27/195/30/19

Fingerprint

MOSFET
Electric breakdown
Driver
Damping
Networks (circuits)
Electric potential
Voltage
Breakdown

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Control and Optimization

Cite this

Chen, J., Li, Y., Liang, M., Kennel, R., Liu, J., & Guo, H. (2019). A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET. In ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia (pp. 147-153). [8797207] (ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia). Institute of Electrical and Electronics Engineers Inc..
Chen, Jiangui ; Li, Yan ; Liang, Mei ; Kennel, R. ; Liu, Jiayu ; Guo, Haobo. / A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET. ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 147-153 (ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia).
@inproceedings{309279c01d634f338edbc0d3e049bb96,
title = "A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET",
abstract = "SiC MOSFET has faster switching speed, lower RDs(on), and higher breakdown voltage when compared with Si MOSFET. Therefore., SiC MOSFET can work at work at higher frequencies., even Mhz. However., the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper., and a gate driver with the variable gate resistance and the variable driving voltage and is proposed to suppress OVOC of SiC MOSFET. This paper analyzes the working mode of the proposed gate driver (PGD). The PGD can effectively suppress the OVOC of SiC MOSFET. Finally., the effectiveness of the PGD is verified based on a double-pulse test platform.",
author = "Jiangui Chen and Yan Li and Mei Liang and R. Kennel and Jiayu Liu and Haobo Guo",
year = "2019",
month = "5",
day = "1",
language = "English (US)",
series = "ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "147--153",
booktitle = "ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia",
address = "United States",

}

Chen, J, Li, Y, Liang, M, Kennel, R, Liu, J & Guo, H 2019, A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET. in ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia., 8797207, ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia, Institute of Electrical and Electronics Engineers Inc., pp. 147-153, 10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia, Busan, Korea, Republic of, 5/27/19.

A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET. / Chen, Jiangui; Li, Yan; Liang, Mei; Kennel, R.; Liu, Jiayu; Guo, Haobo.

ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia. Institute of Electrical and Electronics Engineers Inc., 2019. p. 147-153 8797207 (ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET

AU - Chen, Jiangui

AU - Li, Yan

AU - Liang, Mei

AU - Kennel, R.

AU - Liu, Jiayu

AU - Guo, Haobo

PY - 2019/5/1

Y1 - 2019/5/1

N2 - SiC MOSFET has faster switching speed, lower RDs(on), and higher breakdown voltage when compared with Si MOSFET. Therefore., SiC MOSFET can work at work at higher frequencies., even Mhz. However., the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper., and a gate driver with the variable gate resistance and the variable driving voltage and is proposed to suppress OVOC of SiC MOSFET. This paper analyzes the working mode of the proposed gate driver (PGD). The PGD can effectively suppress the OVOC of SiC MOSFET. Finally., the effectiveness of the PGD is verified based on a double-pulse test platform.

AB - SiC MOSFET has faster switching speed, lower RDs(on), and higher breakdown voltage when compared with Si MOSFET. Therefore., SiC MOSFET can work at work at higher frequencies., even Mhz. However., the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper., and a gate driver with the variable gate resistance and the variable driving voltage and is proposed to suppress OVOC of SiC MOSFET. This paper analyzes the working mode of the proposed gate driver (PGD). The PGD can effectively suppress the OVOC of SiC MOSFET. Finally., the effectiveness of the PGD is verified based on a double-pulse test platform.

UR - http://www.scopus.com/inward/record.url?scp=85071616097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071616097&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85071616097

T3 - ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia

SP - 147

EP - 153

BT - ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Chen J, Li Y, Liang M, Kennel R, Liu J, Guo H. A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET. In ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia. Institute of Electrical and Electronics Engineers Inc. 2019. p. 147-153. 8797207. (ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia).