A novel technique for increasing electron mobility of indium-tin-oxide transparent conducting films

S. H. Keshmiri, M. Rezaee-Roknabadi, S Ashok

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Indium-tin oxide (ITO) films are used as transparent electrodes in display and other optoelectronic devices. Despite the reasonably high free electron concentration in these films, their electrical conductivities are much lower than that of metals. This is due in part to the reduced electron mobility caused by the high concentration of trapping centers created by structural defects in the ITO film. In this article, a simple technique is proposed for post-deposition treatment of ITO films to improve their properties. It has been found that exposure of ITO films to atomic-hydrogen plasma produces a significant increase in the electrical conductivity of the films. Under optimum conditions, over a three-fold increase in electrical conductivity is observed. The hydrogenation process does not affect optical transparency of the samples adversely. In fact a slight improvement over the visible range is seen.

Original languageEnglish (US)
Pages (from-to)167-170
Number of pages4
JournalThin Solid Films
Volume413
Issue number1-2
DOIs
StatePublished - Jun 24 2002

Fingerprint

Conductive films
Electron mobility
Tin oxides
electron mobility
indium oxides
Indium
tin oxides
Oxide films
oxide films
conduction
electrical resistivity
hydrogen plasma
optoelectronic devices
Optoelectronic devices
Transparency
free electrons
Hydrogenation
hydrogenation
Hydrogen
Metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Keshmiri, S. H. ; Rezaee-Roknabadi, M. ; Ashok, S. / A novel technique for increasing electron mobility of indium-tin-oxide transparent conducting films. In: Thin Solid Films. 2002 ; Vol. 413, No. 1-2. pp. 167-170.
@article{6575d61be30348f1ac05be386e7136d8,
title = "A novel technique for increasing electron mobility of indium-tin-oxide transparent conducting films",
abstract = "Indium-tin oxide (ITO) films are used as transparent electrodes in display and other optoelectronic devices. Despite the reasonably high free electron concentration in these films, their electrical conductivities are much lower than that of metals. This is due in part to the reduced electron mobility caused by the high concentration of trapping centers created by structural defects in the ITO film. In this article, a simple technique is proposed for post-deposition treatment of ITO films to improve their properties. It has been found that exposure of ITO films to atomic-hydrogen plasma produces a significant increase in the electrical conductivity of the films. Under optimum conditions, over a three-fold increase in electrical conductivity is observed. The hydrogenation process does not affect optical transparency of the samples adversely. In fact a slight improvement over the visible range is seen.",
author = "Keshmiri, {S. H.} and M. Rezaee-Roknabadi and S Ashok",
year = "2002",
month = "6",
day = "24",
doi = "10.1016/S0040-6090(02)00340-1",
language = "English (US)",
volume = "413",
pages = "167--170",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

A novel technique for increasing electron mobility of indium-tin-oxide transparent conducting films. / Keshmiri, S. H.; Rezaee-Roknabadi, M.; Ashok, S.

In: Thin Solid Films, Vol. 413, No. 1-2, 24.06.2002, p. 167-170.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A novel technique for increasing electron mobility of indium-tin-oxide transparent conducting films

AU - Keshmiri, S. H.

AU - Rezaee-Roknabadi, M.

AU - Ashok, S

PY - 2002/6/24

Y1 - 2002/6/24

N2 - Indium-tin oxide (ITO) films are used as transparent electrodes in display and other optoelectronic devices. Despite the reasonably high free electron concentration in these films, their electrical conductivities are much lower than that of metals. This is due in part to the reduced electron mobility caused by the high concentration of trapping centers created by structural defects in the ITO film. In this article, a simple technique is proposed for post-deposition treatment of ITO films to improve their properties. It has been found that exposure of ITO films to atomic-hydrogen plasma produces a significant increase in the electrical conductivity of the films. Under optimum conditions, over a three-fold increase in electrical conductivity is observed. The hydrogenation process does not affect optical transparency of the samples adversely. In fact a slight improvement over the visible range is seen.

AB - Indium-tin oxide (ITO) films are used as transparent electrodes in display and other optoelectronic devices. Despite the reasonably high free electron concentration in these films, their electrical conductivities are much lower than that of metals. This is due in part to the reduced electron mobility caused by the high concentration of trapping centers created by structural defects in the ITO film. In this article, a simple technique is proposed for post-deposition treatment of ITO films to improve their properties. It has been found that exposure of ITO films to atomic-hydrogen plasma produces a significant increase in the electrical conductivity of the films. Under optimum conditions, over a three-fold increase in electrical conductivity is observed. The hydrogenation process does not affect optical transparency of the samples adversely. In fact a slight improvement over the visible range is seen.

UR - http://www.scopus.com/inward/record.url?scp=0037166484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037166484&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00340-1

DO - 10.1016/S0040-6090(02)00340-1

M3 - Article

AN - SCOPUS:0037166484

VL - 413

SP - 167

EP - 170

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -