A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2

Patrick M. Lenahan, J. F. Conley

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A physically based model is developed which explains apparently unrelated aspects of the Si/SiO2 interface trap generation process: the predictions of the model are in at least semiquantitative agreement with observations previously reported in the literature. The model involves interactions between molecular hydrogen and trivalent silicon dangling bond defects in the oxide (E′ centers) and at the Si/SiO2 interface (Pb centers). Our model is primarily directed at interface trap generation caused by ionizing radiation and by hot hole injection phenomena observed in short channel transistors.

Original languageEnglish (US)
Pages (from-to)3126-3128
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number21
DOIs
StatePublished - Nov 24 1997

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traps
ionizing radiation
transistors
injection
oxides
defects
silicon
hydrogen
predictions
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2 . / Lenahan, Patrick M.; Conley, J. F.

In: Applied Physics Letters, Vol. 71, No. 21, 24.11.1997, p. 3126-3128.

Research output: Contribution to journalArticle

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