A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

Han Yan, Zexin Feng, Shunli Shang, Xiaoning Wang, Zexiang Hu, Jinhua Wang, Zengwei Zhu, Hui Wang, Zuhuang Chen, Hui Hua, Wenkuo Lu, Jingmin Wang, Peixin Qin, Huixin Guo, Xiaorong Zhou, Zhaoguogang Leng, Zi-kui Liu, Chengbao Jiang, Michael Coey, Zhiqi Liu

Research output: Contribution to journalLetter

9 Citations (Scopus)

Abstract

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields1–3. Different device concepts have been predicted4,5 and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves6, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields7 or Néel spin–orbit torque8 is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures9–12, which suppresses Joule heating caused by switching currents and may enable low-energy-consuming electronic devices. Here, we combine the two material classes to explore changes in the resistance of the high-Néel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field that are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunnelling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory that is fully operational in strong magnetic fields and has the potential for low-energy and high-density memory applications.

Original languageEnglish (US)
Pages (from-to)131-136
Number of pages6
JournalNature nanotechnology
Volume14
Issue number2
DOIs
StatePublished - Feb 1 2019

Fingerprint

Magnetic fields
Data storage equipment
tunnel junctions
room temperature
magnetic fields
Tunnel junctions
spin temperature
electric fields
Joule heating
Antiferromagnetic materials
Temperature
Tunnelling magnetoresistance
Electric fields
Enhanced magnetoresistance
Magnetoelectronics
Piezoelectric materials
Magnetism
heating
energy
electronics

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Yan, Han ; Feng, Zexin ; Shang, Shunli ; Wang, Xiaoning ; Hu, Zexiang ; Wang, Jinhua ; Zhu, Zengwei ; Wang, Hui ; Chen, Zuhuang ; Hua, Hui ; Lu, Wenkuo ; Wang, Jingmin ; Qin, Peixin ; Guo, Huixin ; Zhou, Xiaorong ; Leng, Zhaoguogang ; Liu, Zi-kui ; Jiang, Chengbao ; Coey, Michael ; Liu, Zhiqi. / A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields. In: Nature nanotechnology. 2019 ; Vol. 14, No. 2. pp. 131-136.
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title = "A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields",
abstract = "Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields1–3. Different device concepts have been predicted4,5 and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves6, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields7 or N{\'e}el spin–orbit torque8 is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures9–12, which suppresses Joule heating caused by switching currents and may enable low-energy-consuming electronic devices. Here, we combine the two material classes to explore changes in the resistance of the high-N{\'e}el-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field that are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunnelling anisotropic magnetoresistance reaches ~11.2{\%} at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory that is fully operational in strong magnetic fields and has the potential for low-energy and high-density memory applications.",
author = "Han Yan and Zexin Feng and Shunli Shang and Xiaoning Wang and Zexiang Hu and Jinhua Wang and Zengwei Zhu and Hui Wang and Zuhuang Chen and Hui Hua and Wenkuo Lu and Jingmin Wang and Peixin Qin and Huixin Guo and Xiaorong Zhou and Zhaoguogang Leng and Zi-kui Liu and Chengbao Jiang and Michael Coey and Zhiqi Liu",
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doi = "10.1038/s41565-018-0339-0",
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Yan, H, Feng, Z, Shang, S, Wang, X, Hu, Z, Wang, J, Zhu, Z, Wang, H, Chen, Z, Hua, H, Lu, W, Wang, J, Qin, P, Guo, H, Zhou, X, Leng, Z, Liu, Z, Jiang, C, Coey, M & Liu, Z 2019, 'A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields', Nature nanotechnology, vol. 14, no. 2, pp. 131-136. https://doi.org/10.1038/s41565-018-0339-0

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields. / Yan, Han; Feng, Zexin; Shang, Shunli; Wang, Xiaoning; Hu, Zexiang; Wang, Jinhua; Zhu, Zengwei; Wang, Hui; Chen, Zuhuang; Hua, Hui; Lu, Wenkuo; Wang, Jingmin; Qin, Peixin; Guo, Huixin; Zhou, Xiaorong; Leng, Zhaoguogang; Liu, Zi-kui; Jiang, Chengbao; Coey, Michael; Liu, Zhiqi.

In: Nature nanotechnology, Vol. 14, No. 2, 01.02.2019, p. 131-136.

Research output: Contribution to journalLetter

TY - JOUR

T1 - A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

AU - Yan, Han

AU - Feng, Zexin

AU - Shang, Shunli

AU - Wang, Xiaoning

AU - Hu, Zexiang

AU - Wang, Jinhua

AU - Zhu, Zengwei

AU - Wang, Hui

AU - Chen, Zuhuang

AU - Hua, Hui

AU - Lu, Wenkuo

AU - Wang, Jingmin

AU - Qin, Peixin

AU - Guo, Huixin

AU - Zhou, Xiaorong

AU - Leng, Zhaoguogang

AU - Liu, Zi-kui

AU - Jiang, Chengbao

AU - Coey, Michael

AU - Liu, Zhiqi

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields1–3. Different device concepts have been predicted4,5 and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves6, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields7 or Néel spin–orbit torque8 is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures9–12, which suppresses Joule heating caused by switching currents and may enable low-energy-consuming electronic devices. Here, we combine the two material classes to explore changes in the resistance of the high-Néel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field that are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunnelling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory that is fully operational in strong magnetic fields and has the potential for low-energy and high-density memory applications.

AB - Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields1–3. Different device concepts have been predicted4,5 and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves6, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields7 or Néel spin–orbit torque8 is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures9–12, which suppresses Joule heating caused by switching currents and may enable low-energy-consuming electronic devices. Here, we combine the two material classes to explore changes in the resistance of the high-Néel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field that are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunnelling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory that is fully operational in strong magnetic fields and has the potential for low-energy and high-density memory applications.

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U2 - 10.1038/s41565-018-0339-0

DO - 10.1038/s41565-018-0339-0

M3 - Letter

C2 - 30617308

AN - SCOPUS:85059701379

VL - 14

SP - 131

EP - 136

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

IS - 2

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