A programmable ferroelectric single electron transistor

Lu Liu, Vijaykrishnan Narayanan, Suman Datta

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We experimentally demonstrate a programmable ferroelectric single electron transistor using direct monolithic integration of a multi-gate III-V (In 0.7Ga0.3As) quantum well field effect transistor with a composite ferroelectric (lead zirconium titanate) and high-k (hafnium dioxide) gate stack. A split gate electrode configuration allows electrical tuning of the tunnel barrier profile and reconfigurable programming of the device to operate in both classical and Coulomb blockade mode. The ferroelectric gate stack under the split gate electrode further allows non-volatile operation in both modes. This demonstration is a significant step towards realization of a non-volatile, programmable binary decision diagram logic circuit for ultra low power operation.

Original languageEnglish (US)
Article number053505
JournalApplied Physics Letters
Volume102
Issue number5
DOIs
StatePublished - Feb 4 2013

Fingerprint

single electron transistors
logic circuits
electrodes
hafnium
programming
dioxides
tunnels
field effect transistors
diagrams
tuning
quantum wells
composite materials
profiles
configurations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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A programmable ferroelectric single electron transistor. / Liu, Lu; Narayanan, Vijaykrishnan; Datta, Suman.

In: Applied Physics Letters, Vol. 102, No. 5, 053505, 04.02.2013.

Research output: Contribution to journalArticle

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