A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations

Nicole L. Rowsey, Mark E. Law, Ronald D. Schrimpf, Daniel M. Fleetwood, Blair R. Tuttle, Sokrates T. Pantelides

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H 2 concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.

Original languageEnglish (US)
Article number6060936
Pages (from-to)2937-2944
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6 PART 1
StatePublished - Dec 2011

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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