A radically different model for NBTI in nitrided oxide MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.

Original languageEnglish (US)
Title of host publication2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009
Pages90-92
Number of pages3
DOIs
StatePublished - Dec 1 2009
Event2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA, United States
Duration: Oct 18 2009Oct 22 2009

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2009 IEEE International Integrated Reliability Workshop, IIRW 2009
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/18/0910/22/09

Fingerprint

Oxides
Hydrogen bonds
Magnetic resonance measurement
4-nitrobenzylthioinosine
Negative bias temperature instability
Hydrogen
Nitrogen
Recovery

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Lenahan, P. M. (2009). A radically different model for NBTI in nitrided oxide MOSFETs. In 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009 (pp. 90-92). [5383026] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2009.5383026
Lenahan, Patrick M. / A radically different model for NBTI in nitrided oxide MOSFETs. 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009. 2009. pp. 90-92 (IEEE International Integrated Reliability Workshop Final Report).
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Lenahan, PM 2009, A radically different model for NBTI in nitrided oxide MOSFETs. in 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009., 5383026, IEEE International Integrated Reliability Workshop Final Report, pp. 90-92, 2009 IEEE International Integrated Reliability Workshop, IIRW 2009, South Lake Tahoe, CA, United States, 10/18/09. https://doi.org/10.1109/IRWS.2009.5383026

A radically different model for NBTI in nitrided oxide MOSFETs. / Lenahan, Patrick M.

2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009. 2009. p. 90-92 5383026 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lenahan PM. A radically different model for NBTI in nitrided oxide MOSFETs. In 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009. 2009. p. 90-92. 5383026. (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2009.5383026