A radically different model for NBTI in nitrided oxide MOSFETs

Patrick M. Lenahan

doi:10.1109/IRWS.2009.5383026

A radically different model for NBTI in nitrided oxide MOSFETs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.

Original language	English (US)
Title of host publication	2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009
Pages	90-92
Number of pages	3
DOIs	https://doi.org/10.1109/IRWS.2009.5383026
State	Published - Dec 1 2009
Event	2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA, United States Duration: Oct 18 2009 → Oct 22 2009

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Other

Other	2009 IEEE International Integrated Reliability Workshop, IIRW 2009
Country	United States
City	South Lake Tahoe, CA
Period	10/18/09 → 10/22/09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IRWS.2009.5383026

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Cite this

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title = "A radically different model for NBTI in nitrided oxide MOSFETs",

abstract = "This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.",

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Lenahan, PM 2009, A radically different model for NBTI in nitrided oxide MOSFETs. in 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009., 5383026, IEEE International Integrated Reliability Workshop Final Report, pp. 90-92, 2009 IEEE International Integrated Reliability Workshop, IIRW 2009, South Lake Tahoe, CA, United States, 10/18/09. https://doi.org/10.1109/IRWS.2009.5383026

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