Abstract
This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.
| Original language | English (US) |
|---|---|
| Title of host publication | 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009 |
| Pages | 90-92 |
| Number of pages | 3 |
| DOIs | |
| State | Published - Dec 1 2009 |
| Event | 2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA, United States Duration: Oct 18 2009 → Oct 22 2009 |
Publication series
| Name | IEEE International Integrated Reliability Workshop Final Report |
|---|
Other
| Other | 2009 IEEE International Integrated Reliability Workshop, IIRW 2009 |
|---|---|
| Country | United States |
| City | South Lake Tahoe, CA |
| Period | 10/18/09 → 10/22/09 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
- Electronic, Optical and Magnetic Materials
Cite this
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A radically different model for NBTI in nitrided oxide MOSFETs. / Lenahan, Patrick M.
2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009. 2009. p. 90-92 5383026 (IEEE International Integrated Reliability Workshop Final Report).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A radically different model for NBTI in nitrided oxide MOSFETs
AU - Lenahan, Patrick M.
PY - 2009/12/1
Y1 - 2009/12/1
N2 - This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.
AB - This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.
UR - http://www.scopus.com/inward/record.url?scp=77951058005&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951058005&partnerID=8YFLogxK
U2 - 10.1109/IRWS.2009.5383026
DO - 10.1109/IRWS.2009.5383026
M3 - Conference contribution
AN - SCOPUS:77951058005
SN - 9781424439218
T3 - IEEE International Integrated Reliability Workshop Final Report
SP - 90
EP - 92
BT - 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009
ER -