A roadmap for electronic grade 2D materials

Natalie Briggs, Shruti Subramanian, Zhong Lin, Xufan Li, Xiaotian Zhang, Kehao Zhang, Kai Xiao, David Geohegan, Robert Wallace, Long-qing Chen, Mauricio Terrones Maldonado, Seyedehaida Ebrahimi, Saptarshi Das, Joan Marie Redwing, Christopher Hinkle, Kasra Momeni, Adri Van Duin, Vincent Henry Crespi, Swastik Kar, Joshua Alexander Robinson

Research output: Contribution to journalReview article

16 Citations (Scopus)

Abstract

Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano- A nd atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang et al 2017 Sci. Rep. 7 16938; Conley et al 2013 Nano Lett. 13 3626-30; Li et al 2016 Adv. Mater. 28 8240-7; Rhodes et al 2017 Nano Lett. 17 1616-22; Gong et al 2014 Nano Lett. 14 442-9; Suh et al 2014 Nano Lett. 14 6976-82; Yoshida et al 2015 Sci. Rep. 5 14808). Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go 'beyond the bench', advances in large-scale, 2D layer synthesis and engineering must lead to 'exfoliation-quality' 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications.

Original languageEnglish (US)
Article number022001
Journal2D Materials
Volume6
Issue number2
DOIs
StatePublished - Jan 17 2019

Fingerprint

grade
engineering
electronics
molybdenum disulfides
Tungsten
synthesis
Electronic properties
Optoelectronic devices
seats
Molybdenum
manipulators
tungsten
platforms
Doping (additives)
wafers
Semiconductor materials
Substrates
Experiments

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Briggs, N., Subramanian, S., Lin, Z., Li, X., Zhang, X., Zhang, K., ... Robinson, J. A. (2019). A roadmap for electronic grade 2D materials. 2D Materials, 6(2), [022001]. https://doi.org/10.1088/2053-1583/aaf836
Briggs, Natalie ; Subramanian, Shruti ; Lin, Zhong ; Li, Xufan ; Zhang, Xiaotian ; Zhang, Kehao ; Xiao, Kai ; Geohegan, David ; Wallace, Robert ; Chen, Long-qing ; Terrones Maldonado, Mauricio ; Ebrahimi, Seyedehaida ; Das, Saptarshi ; Redwing, Joan Marie ; Hinkle, Christopher ; Momeni, Kasra ; Van Duin, Adri ; Crespi, Vincent Henry ; Kar, Swastik ; Robinson, Joshua Alexander. / A roadmap for electronic grade 2D materials. In: 2D Materials. 2019 ; Vol. 6, No. 2.
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title = "A roadmap for electronic grade 2D materials",
abstract = "Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano- A nd atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang et al 2017 Sci. Rep. 7 16938; Conley et al 2013 Nano Lett. 13 3626-30; Li et al 2016 Adv. Mater. 28 8240-7; Rhodes et al 2017 Nano Lett. 17 1616-22; Gong et al 2014 Nano Lett. 14 442-9; Suh et al 2014 Nano Lett. 14 6976-82; Yoshida et al 2015 Sci. Rep. 5 14808). Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go 'beyond the bench', advances in large-scale, 2D layer synthesis and engineering must lead to 'exfoliation-quality' 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications.",
author = "Natalie Briggs and Shruti Subramanian and Zhong Lin and Xufan Li and Xiaotian Zhang and Kehao Zhang and Kai Xiao and David Geohegan and Robert Wallace and Long-qing Chen and {Terrones Maldonado}, Mauricio and Seyedehaida Ebrahimi and Saptarshi Das and Redwing, {Joan Marie} and Christopher Hinkle and Kasra Momeni and {Van Duin}, Adri and Crespi, {Vincent Henry} and Swastik Kar and Robinson, {Joshua Alexander}",
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Briggs, N, Subramanian, S, Lin, Z, Li, X, Zhang, X, Zhang, K, Xiao, K, Geohegan, D, Wallace, R, Chen, L, Terrones Maldonado, M, Ebrahimi, S, Das, S, Redwing, JM, Hinkle, C, Momeni, K, Van Duin, A, Crespi, VH, Kar, S & Robinson, JA 2019, 'A roadmap for electronic grade 2D materials', 2D Materials, vol. 6, no. 2, 022001. https://doi.org/10.1088/2053-1583/aaf836

A roadmap for electronic grade 2D materials. / Briggs, Natalie; Subramanian, Shruti; Lin, Zhong; Li, Xufan; Zhang, Xiaotian; Zhang, Kehao; Xiao, Kai; Geohegan, David; Wallace, Robert; Chen, Long-qing; Terrones Maldonado, Mauricio; Ebrahimi, Seyedehaida; Das, Saptarshi; Redwing, Joan Marie; Hinkle, Christopher; Momeni, Kasra; Van Duin, Adri; Crespi, Vincent Henry; Kar, Swastik; Robinson, Joshua Alexander.

In: 2D Materials, Vol. 6, No. 2, 022001, 17.01.2019.

Research output: Contribution to journalReview article

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AU - Briggs, Natalie

AU - Subramanian, Shruti

AU - Lin, Zhong

AU - Li, Xufan

AU - Zhang, Xiaotian

AU - Zhang, Kehao

AU - Xiao, Kai

AU - Geohegan, David

AU - Wallace, Robert

AU - Chen, Long-qing

AU - Terrones Maldonado, Mauricio

AU - Ebrahimi, Seyedehaida

AU - Das, Saptarshi

AU - Redwing, Joan Marie

AU - Hinkle, Christopher

AU - Momeni, Kasra

AU - Van Duin, Adri

AU - Crespi, Vincent Henry

AU - Kar, Swastik

AU - Robinson, Joshua Alexander

PY - 2019/1/17

Y1 - 2019/1/17

N2 - Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano- A nd atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang et al 2017 Sci. Rep. 7 16938; Conley et al 2013 Nano Lett. 13 3626-30; Li et al 2016 Adv. Mater. 28 8240-7; Rhodes et al 2017 Nano Lett. 17 1616-22; Gong et al 2014 Nano Lett. 14 442-9; Suh et al 2014 Nano Lett. 14 6976-82; Yoshida et al 2015 Sci. Rep. 5 14808). Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go 'beyond the bench', advances in large-scale, 2D layer synthesis and engineering must lead to 'exfoliation-quality' 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications.

AB - Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano- A nd atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang et al 2017 Sci. Rep. 7 16938; Conley et al 2013 Nano Lett. 13 3626-30; Li et al 2016 Adv. Mater. 28 8240-7; Rhodes et al 2017 Nano Lett. 17 1616-22; Gong et al 2014 Nano Lett. 14 442-9; Suh et al 2014 Nano Lett. 14 6976-82; Yoshida et al 2015 Sci. Rep. 5 14808). Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go 'beyond the bench', advances in large-scale, 2D layer synthesis and engineering must lead to 'exfoliation-quality' 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications.

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Briggs N, Subramanian S, Lin Z, Li X, Zhang X, Zhang K et al. A roadmap for electronic grade 2D materials. 2D Materials. 2019 Jan 17;6(2). 022001. https://doi.org/10.1088/2053-1583/aaf836