Abstract
Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano- A nd atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang et al 2017 Sci. Rep. 7 16938; Conley et al 2013 Nano Lett. 13 3626-30; Li et al 2016 Adv. Mater. 28 8240-7; Rhodes et al 2017 Nano Lett. 17 1616-22; Gong et al 2014 Nano Lett. 14 442-9; Suh et al 2014 Nano Lett. 14 6976-82; Yoshida et al 2015 Sci. Rep. 5 14808). Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go 'beyond the bench', advances in large-scale, 2D layer synthesis and engineering must lead to 'exfoliation-quality' 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications.
| Original language | English (US) |
|---|---|
| Article number | 022001 |
| Journal | 2D Materials |
| Volume | 6 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 17 2019 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
}
A roadmap for electronic grade 2D materials. / Briggs, Natalie; Subramanian, Shruti; Lin, Zhong; Li, Xufan; Zhang, Xiaotian; Zhang, Kehao; Xiao, Kai; Geohegan, David; Wallace, Robert; Chen, Long Qing; Terrones, Mauricio; Ebrahimi, Aida; Das, Saptarshi; Redwing, Joan; Hinkle, Christopher; Momeni, Kasra; Van Duin, Adri; Crespi, Vin; Kar, Swastik; Robinson, Joshua A.
In: 2D Materials, Vol. 6, No. 2, 022001, 17.01.2019.Research output: Contribution to journal › Review article
TY - JOUR
T1 - A roadmap for electronic grade 2D materials
AU - Briggs, Natalie
AU - Subramanian, Shruti
AU - Lin, Zhong
AU - Li, Xufan
AU - Zhang, Xiaotian
AU - Zhang, Kehao
AU - Xiao, Kai
AU - Geohegan, David
AU - Wallace, Robert
AU - Chen, Long Qing
AU - Terrones, Mauricio
AU - Ebrahimi, Aida
AU - Das, Saptarshi
AU - Redwing, Joan
AU - Hinkle, Christopher
AU - Momeni, Kasra
AU - Van Duin, Adri
AU - Crespi, Vin
AU - Kar, Swastik
AU - Robinson, Joshua A.
PY - 2019/1/17
Y1 - 2019/1/17
N2 - Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano- A nd atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang et al 2017 Sci. Rep. 7 16938; Conley et al 2013 Nano Lett. 13 3626-30; Li et al 2016 Adv. Mater. 28 8240-7; Rhodes et al 2017 Nano Lett. 17 1616-22; Gong et al 2014 Nano Lett. 14 442-9; Suh et al 2014 Nano Lett. 14 6976-82; Yoshida et al 2015 Sci. Rep. 5 14808). Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go 'beyond the bench', advances in large-scale, 2D layer synthesis and engineering must lead to 'exfoliation-quality' 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications.
AB - Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano- A nd atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang et al 2017 Sci. Rep. 7 16938; Conley et al 2013 Nano Lett. 13 3626-30; Li et al 2016 Adv. Mater. 28 8240-7; Rhodes et al 2017 Nano Lett. 17 1616-22; Gong et al 2014 Nano Lett. 14 442-9; Suh et al 2014 Nano Lett. 14 6976-82; Yoshida et al 2015 Sci. Rep. 5 14808). Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go 'beyond the bench', advances in large-scale, 2D layer synthesis and engineering must lead to 'exfoliation-quality' 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications.
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U2 - 10.1088/2053-1583/aaf836
DO - 10.1088/2053-1583/aaf836
M3 - Review article
AN - SCOPUS:85065206459
VL - 6
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 2
M1 - 022001
ER -