A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)

Bangzhi Liu, J. Nogami

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

The epitaxial growth of dysprosium silicide on silicon substrates was studied. Scanning tunneling microscopy (STM) was used for the study. The density and width of nanowires were found to be metal coverage dependent. The growth rate was seen to increase with greater coverage and with increase in annealing time.

Original languageEnglish (US)
Pages (from-to)593-599
Number of pages7
JournalJournal of Applied Physics
Volume93
Issue number1
DOIs
StatePublished - Jan 1 2003

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dysprosium
scanning tunneling microscopy
nanowires
annealing
silicon
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001). / Liu, Bangzhi; Nogami, J.

In: Journal of Applied Physics, Vol. 93, No. 1, 01.01.2003, p. 593-599.

Research output: Contribution to journalArticle

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