A-Si: H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates

J. A. Nichols; Thomas Nelson Jackson; M. H. Lu; M. Hack

doi:10.1109/DRC.2004.1367782

A-Si: H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates

J. A. Nichols, Thomas Nelson Jackson, M. H. Lu, M. Hack

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

A-Si:H thin film transistors (TFT) phosphorescent organic light emitting diode (OLED) active matrix pixels and pixel array were fabricated on 50μm thick polyimide substrates. 4-inch polymeric substrates were laminated to glass plates using a removal pressure-sensitive silicone gel adhesive to improve thermal coupling, maintain a flat surface, and provide rigid support during processing. A inverted staggered tri-layer a-Si:H process with a maximum process temperature of 250 °C and conservative 15 μm layout rules was used for pixel fabrication. The results show that the backplane fabricated on polyimide and an optical microscope image is complete of a portion of an array before OLED.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	59-60
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367782
State	Published - Dec 1 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/DRC.2004.1367782

Cite this

@inproceedings{014efac5683c4762847a667c2124e18d,

title = "A-Si: H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates",

abstract = "A-Si:H thin film transistors (TFT) phosphorescent organic light emitting diode (OLED) active matrix pixels and pixel array were fabricated on 50μm thick polyimide substrates. 4-inch polymeric substrates were laminated to glass plates using a removal pressure-sensitive silicone gel adhesive to improve thermal coupling, maintain a flat surface, and provide rigid support during processing. A inverted staggered tri-layer a-Si:H process with a maximum process temperature of 250 °C and conservative 15 μm layout rules was used for pixel fabrication. The results show that the backplane fabricated on polyimide and an optical microscope image is complete of a portion of an array before OLED.",

author = "Nichols, {J. A.} and Jackson, {Thomas Nelson} and Lu, {M. H.} and M. Hack",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/DRC.2004.1367782",

language = "English (US)",

isbn = "0780382846",

pages = "59--60",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

TY - GEN

T1 - A-Si

T2 - Device Research Conference - Conference Digest, 62nd DRC

AU - Nichols, J. A.

AU - Jackson, Thomas Nelson

AU - Lu, M. H.

AU - Hack, M.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - A-Si:H thin film transistors (TFT) phosphorescent organic light emitting diode (OLED) active matrix pixels and pixel array were fabricated on 50μm thick polyimide substrates. 4-inch polymeric substrates were laminated to glass plates using a removal pressure-sensitive silicone gel adhesive to improve thermal coupling, maintain a flat surface, and provide rigid support during processing. A inverted staggered tri-layer a-Si:H process with a maximum process temperature of 250 °C and conservative 15 μm layout rules was used for pixel fabrication. The results show that the backplane fabricated on polyimide and an optical microscope image is complete of a portion of an array before OLED.

AB - A-Si:H thin film transistors (TFT) phosphorescent organic light emitting diode (OLED) active matrix pixels and pixel array were fabricated on 50μm thick polyimide substrates. 4-inch polymeric substrates were laminated to glass plates using a removal pressure-sensitive silicone gel adhesive to improve thermal coupling, maintain a flat surface, and provide rigid support during processing. A inverted staggered tri-layer a-Si:H process with a maximum process temperature of 250 °C and conservative 15 μm layout rules was used for pixel fabrication. The results show that the backplane fabricated on polyimide and an optical microscope image is complete of a portion of an array before OLED.

UR - http://www.scopus.com/inward/record.url?scp=18044380892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18044380892&partnerID=8YFLogxK

U2 - 10.1109/DRC.2004.1367782

DO - 10.1109/DRC.2004.1367782

M3 - Conference contribution

AN - SCOPUS:18044380892

SN - 0780382846

SP - 59

EP - 60

BT - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

A-Si: H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this