A-Si: H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates

J. A. Nichols, Thomas Nelson Jackson, M. H. Lu, M. Hack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

A-Si:H thin film transistors (TFT) phosphorescent organic light emitting diode (OLED) active matrix pixels and pixel array were fabricated on 50μm thick polyimide substrates. 4-inch polymeric substrates were laminated to glass plates using a removal pressure-sensitive silicone gel adhesive to improve thermal coupling, maintain a flat surface, and provide rigid support during processing. A inverted staggered tri-layer a-Si:H process with a maximum process temperature of 250 °C and conservative 15 μm layout rules was used for pixel fabrication. The results show that the backplane fabricated on polyimide and an optical microscope image is complete of a portion of an array before OLED.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages59-60
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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