A simple bilayered magnetoelectric random access memory cell based on electric-field controllable domain structure

Jiamian Hu, Zheng Li, Jing Wang, Jing Ma, Y. H. Lin, C. W. Nan

Research output: Contribution to journalArticle

30 Scopus citations


By considering the domain wall scattering in ferromagnetic striped-domain structure, we present a simple bilayered magnetoelectric random access memory cell with a ferromagnetic thin film grown on a ferroelectric layer. The calculations show that the striped-domain structure in the ferromagnetic film can change into a single-domain structure upon applying an electric field to the ferroelectric layer. As a result, the presence (absence) of the domain walls in response to the striped-domain (single-domain) state can cause an abrupt change in the film resistivity, which could be employed for memory applications accordingly.

Original languageEnglish (US)
Article number043909
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - Aug 15 2010


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this