A-site stoichiometry and piezoelectric response in thin film PbZr1-xTixO3

D. M. Marincel, S. Jesse, A. Belianinov, M. B. Okatan, S. V. Kalinin, Thomas Nelson Jackson, Clive A. Randall, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600, respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity, piezoelectricity as indicated via the Rayleigh coefficients, and the aging rates were found to be weakly dependent of the lead content in the single phase field. Minor polarization-electric field hysteresis loops and piezoelectric coefficient e31,f values after a hot poling process suggest that the point defect helps stabilize the aligned domain states. Measurements of the local nonlinear response show an increased low response cluster size with decreasing PbO content, indicating that PbO deficiency acts to reduce domain wall motion where it is already low.

Original languageEnglish (US)
Article number204104
JournalJournal of Applied Physics
Volume117
Issue number20
DOIs
StatePublished - May 28 2015

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stoichiometry
permittivity
piezoelectricity
coefficients
thin films
tangents
point defects
partial pressure
domain wall
hysteresis
electric fields
polarization

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "A-site stoichiometry and piezoelectric response in thin film PbZr1-xTixO3",
abstract = "Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600, respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity, piezoelectricity as indicated via the Rayleigh coefficients, and the aging rates were found to be weakly dependent of the lead content in the single phase field. Minor polarization-electric field hysteresis loops and piezoelectric coefficient e31,f values after a hot poling process suggest that the point defect helps stabilize the aligned domain states. Measurements of the local nonlinear response show an increased low response cluster size with decreasing PbO content, indicating that PbO deficiency acts to reduce domain wall motion where it is already low.",
author = "Marincel, {D. M.} and S. Jesse and A. Belianinov and Okatan, {M. B.} and Kalinin, {S. V.} and Jackson, {Thomas Nelson} and Randall, {Clive A.} and Trolier-McKinstry, {Susan E.}",
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A-site stoichiometry and piezoelectric response in thin film PbZr1-xTixO3. / Marincel, D. M.; Jesse, S.; Belianinov, A.; Okatan, M. B.; Kalinin, S. V.; Jackson, Thomas Nelson; Randall, Clive A.; Trolier-McKinstry, Susan E.

In: Journal of Applied Physics, Vol. 117, No. 20, 204104, 28.05.2015.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Marincel, D. M.

AU - Jesse, S.

AU - Belianinov, A.

AU - Okatan, M. B.

AU - Kalinin, S. V.

AU - Jackson, Thomas Nelson

AU - Randall, Clive A.

AU - Trolier-McKinstry, Susan E.

PY - 2015/5/28

Y1 - 2015/5/28

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AB - Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600, respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity, piezoelectricity as indicated via the Rayleigh coefficients, and the aging rates were found to be weakly dependent of the lead content in the single phase field. Minor polarization-electric field hysteresis loops and piezoelectric coefficient e31,f values after a hot poling process suggest that the point defect helps stabilize the aligned domain states. Measurements of the local nonlinear response show an increased low response cluster size with decreasing PbO content, indicating that PbO deficiency acts to reduce domain wall motion where it is already low.

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Marincel DM, Jesse S, Belianinov A, Okatan MB, Kalinin SV, Jackson TN et al. A-site stoichiometry and piezoelectric response in thin film PbZr1-xTixO3. Journal of Applied Physics. 2015 May 28;117(20). 204104. https://doi.org/10.1063/1.4921869