A spin dependent recombination study of radiation induced defects at and near the si/sio2 interface

M. A. Jupina, P. M. Lenahan

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Abstract

A new electron spin resonance technique, spin dependent recombination (SDR) permits extremely rapid, high signal to noise ratio Electron Spin Resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. Using SDR, we observe the radiation induced buildup of Pbo and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with (100) silicon surface orientation. Earlier ESR studies of extremely large (~1 cm2) capacitor structures have identified Pb and E' centers as the dominant radiation induced defects in MOS devices. Our results extend and confirm these earlier results and at least qualitatively answer objections to the earlier work related to the relevance of large capacitor studies to transistors in an integrated circuit.

Original languageEnglish (US)
Pages (from-to)1800-1807
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume36
Issue number6
DOIs
Publication statusPublished - Dec 1989

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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