A statistical interpretation of molecular delta layer depth profiles

A. Wucher, K. D. Krantzman, C. Lu, N. Winograd

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The delta layer depth response predicted by a simple statistical sputtering model is compared with molecular sputter depth profile data obtained on Langmuir-Blodgett delta layer systems. All input parameters of the statistical sputtering model are determined from low-fluence molecular dynamics simulations performed for 20-keV C60 cluster bombardment of silicon, making the model de facto parameter free. It is found that both calculated and measured depth response functions can be parametrised by the semiempirical Dowsett expression. The resulting parameters (leading and trailing edge slope, full-width at half-maximum) agree surprisingly well with those determined from the measured depth profiles.

Original languageEnglish (US)
Pages (from-to)39-41
Number of pages3
JournalSurface and Interface Analysis
Volume45
Issue number1
DOIs
StatePublished - Jan 1 2013

Fingerprint

Sputtering
profiles
sputtering
Silicon
Full width at half maximum
Molecular dynamics
trailing edges
leading edges
bombardment
fluence
Computer simulation
slopes
molecular dynamics
silicon
simulation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Wucher, A. ; Krantzman, K. D. ; Lu, C. ; Winograd, N. / A statistical interpretation of molecular delta layer depth profiles. In: Surface and Interface Analysis. 2013 ; Vol. 45, No. 1. pp. 39-41.
@article{1ab55fa483064f96bdf20c7d83e968ca,
title = "A statistical interpretation of molecular delta layer depth profiles",
abstract = "The delta layer depth response predicted by a simple statistical sputtering model is compared with molecular sputter depth profile data obtained on Langmuir-Blodgett delta layer systems. All input parameters of the statistical sputtering model are determined from low-fluence molecular dynamics simulations performed for 20-keV C60 cluster bombardment of silicon, making the model de facto parameter free. It is found that both calculated and measured depth response functions can be parametrised by the semiempirical Dowsett expression. The resulting parameters (leading and trailing edge slope, full-width at half-maximum) agree surprisingly well with those determined from the measured depth profiles.",
author = "A. Wucher and Krantzman, {K. D.} and C. Lu and N. Winograd",
year = "2013",
month = "1",
day = "1",
doi = "10.1002/sia.4966",
language = "English (US)",
volume = "45",
pages = "39--41",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "1",

}

A statistical interpretation of molecular delta layer depth profiles. / Wucher, A.; Krantzman, K. D.; Lu, C.; Winograd, N.

In: Surface and Interface Analysis, Vol. 45, No. 1, 01.01.2013, p. 39-41.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A statistical interpretation of molecular delta layer depth profiles

AU - Wucher, A.

AU - Krantzman, K. D.

AU - Lu, C.

AU - Winograd, N.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The delta layer depth response predicted by a simple statistical sputtering model is compared with molecular sputter depth profile data obtained on Langmuir-Blodgett delta layer systems. All input parameters of the statistical sputtering model are determined from low-fluence molecular dynamics simulations performed for 20-keV C60 cluster bombardment of silicon, making the model de facto parameter free. It is found that both calculated and measured depth response functions can be parametrised by the semiempirical Dowsett expression. The resulting parameters (leading and trailing edge slope, full-width at half-maximum) agree surprisingly well with those determined from the measured depth profiles.

AB - The delta layer depth response predicted by a simple statistical sputtering model is compared with molecular sputter depth profile data obtained on Langmuir-Blodgett delta layer systems. All input parameters of the statistical sputtering model are determined from low-fluence molecular dynamics simulations performed for 20-keV C60 cluster bombardment of silicon, making the model de facto parameter free. It is found that both calculated and measured depth response functions can be parametrised by the semiempirical Dowsett expression. The resulting parameters (leading and trailing edge slope, full-width at half-maximum) agree surprisingly well with those determined from the measured depth profiles.

UR - http://www.scopus.com/inward/record.url?scp=84872871216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872871216&partnerID=8YFLogxK

U2 - 10.1002/sia.4966

DO - 10.1002/sia.4966

M3 - Article

AN - SCOPUS:84872871216

VL - 45

SP - 39

EP - 41

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

ER -