A steep-slope transistor based on abrupt electronic phase transition

Nikhil Shukla, Arun V. Thathachary, Ashish Agrawal, Hanjong Paik, Ahmedullah Aziz, Darrell G. Schlom, Sumeet Kumar Gupta, Roman Engel-Herbert, Suman Datta

Research output: Contribution to journalArticle

125 Citations (Scopus)

Abstract

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

Original languageEnglish (US)
Article number7812
JournalNature communications
Volume6
DOIs
StatePublished - Aug 7 2015

Fingerprint

Phase Transition
Field effect transistors
Transition metals
Transistors
transistors
field effect transistors
Phase transitions
Metals
transition metals
insulators
slopes
electronics
harnesses
Functional materials
dioxides
low voltage
vanadium
logic
amplifiers
routes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Shukla, N., Thathachary, A. V., Agrawal, A., Paik, H., Aziz, A., Schlom, D. G., ... Datta, S. (2015). A steep-slope transistor based on abrupt electronic phase transition. Nature communications, 6, [7812]. https://doi.org/10.1038/ncomms8812
Shukla, Nikhil ; Thathachary, Arun V. ; Agrawal, Ashish ; Paik, Hanjong ; Aziz, Ahmedullah ; Schlom, Darrell G. ; Gupta, Sumeet Kumar ; Engel-Herbert, Roman ; Datta, Suman. / A steep-slope transistor based on abrupt electronic phase transition. In: Nature communications. 2015 ; Vol. 6.
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Shukla, N, Thathachary, AV, Agrawal, A, Paik, H, Aziz, A, Schlom, DG, Gupta, SK, Engel-Herbert, R & Datta, S 2015, 'A steep-slope transistor based on abrupt electronic phase transition', Nature communications, vol. 6, 7812. https://doi.org/10.1038/ncomms8812

A steep-slope transistor based on abrupt electronic phase transition. / Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G.; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman.

In: Nature communications, Vol. 6, 7812, 07.08.2015.

Research output: Contribution to journalArticle

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Shukla N, Thathachary AV, Agrawal A, Paik H, Aziz A, Schlom DG et al. A steep-slope transistor based on abrupt electronic phase transition. Nature communications. 2015 Aug 7;6. 7812. https://doi.org/10.1038/ncomms8812