A study of charge trapping in pecvd pteos films

Patrick M. Lenahan, Curtis A. Billman, Robert Fuller, Howard Evans, William H. Speece, David Decrosta, Robert Lowry

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E' centers. The carbon related centers are unique to the TEOS films.

Original languageEnglish (US)
Pages (from-to)1834-1839
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume44
Issue number6 PART 1
DOIs
StatePublished - 1997

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'A study of charge trapping in pecvd pteos films'. Together they form a unique fingerprint.

Cite this