TY - JOUR
T1 - A Study of GaAs1- xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors
AU - Nalamati, Surya
AU - Sharma, Manish
AU - Deshmukh, Prithviraj
AU - Kronz, Jeffrey
AU - Lavelle, Robert
AU - Snyder, David
AU - Reynolds, C. Lewis
AU - Liu, Yang
AU - Iyer, Shanthi
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/7/26
Y1 - 2019/7/26
N2 - We report the successful growth of high-quality GaAs1-xSbx nanowires on monolayer graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for the application of a flexible near-infrared photodetector. A systematic and detailed study of NW growth parameters, namely, growth temperature, V/III beam equivalent pressure (BEP) ratio, and Ga shutter opening duration, has been carried out. Growth of vertical â111»oriented nanowires on graphene with 4 K photoluminescence emission in the range 1.24-1.38 eV has been achieved. The presence of a weak D mode in Raman spectra of NWs grown on graphene suggests that NW growth did not alter the intrinsic properties of the monolayer graphene. High-resolution transmission electron microscopy and a selective area diffraction pattern confirmed the zinc-blende crystal structure of the NWs. This study suggests that Sb as a surfactant plays a critical role in the surface engineering of the substrate, leading to the superior optical quality of NWs exhibiting a higher 4 K photoluminescence intensity and lower full width at half maxima (fwhm) with significant improvement in optical responsivity compared to NWs grown on Si substrate of similar Sb composition.
AB - We report the successful growth of high-quality GaAs1-xSbx nanowires on monolayer graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for the application of a flexible near-infrared photodetector. A systematic and detailed study of NW growth parameters, namely, growth temperature, V/III beam equivalent pressure (BEP) ratio, and Ga shutter opening duration, has been carried out. Growth of vertical â111»oriented nanowires on graphene with 4 K photoluminescence emission in the range 1.24-1.38 eV has been achieved. The presence of a weak D mode in Raman spectra of NWs grown on graphene suggests that NW growth did not alter the intrinsic properties of the monolayer graphene. High-resolution transmission electron microscopy and a selective area diffraction pattern confirmed the zinc-blende crystal structure of the NWs. This study suggests that Sb as a surfactant plays a critical role in the surface engineering of the substrate, leading to the superior optical quality of NWs exhibiting a higher 4 K photoluminescence intensity and lower full width at half maxima (fwhm) with significant improvement in optical responsivity compared to NWs grown on Si substrate of similar Sb composition.
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U2 - 10.1021/acsanm.9b00893
DO - 10.1021/acsanm.9b00893
M3 - Article
AN - SCOPUS:85075028650
VL - 2
SP - 4528
EP - 4537
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
SN - 2574-0970
IS - 7
ER -