A study of metal/GaAs interface modification by hydrogen plasma

Y. G. Wang, S Ashok

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The modification of metal/GaAs interfaces by atomic hydrogen has been studied using rf plasma in a reactive ion etching (RIE) system as well as hydrogen generated in an electron cyclotron resonance (ECR) system. Current-voltage (I-V) characteristics of Au/n-GaAs Schottky devices reveal a reduction in the barrier height following the room temperature rf plasma, and a slight increase with ECR hydrogenation at elevated temperatures. More interestingly, a profound increase in the effective barrier height is seen for p-GaAs (from 0.35 to 0.84 eV for the rf plasma and 0.35 to 0.69 eV for ECR). Dopant deactivation close to the surface is observed with spreading resistance and capacitance-voltage (C-V) measurements for both conductivity types. The passivation of existing deep levels and the creation of new deep levels have been found in both H RIE treated and ECR hydrogenated GaAs. The large ideality factor n in I-V plots and large voltage intercept in 1/C2 plots suggest the formation of an insulator-like I layer. The improvement in I-V characteristics for ECR hydrogenated n-GaAs indicates the effect of H passivation on a chemically etched GaAs surface. The recovery of the hydrogenation effects has also been studied as a function of temperature, illumination, and bias-anneal.

Original languageEnglish (US)
Pages (from-to)2447-2454
Number of pages8
JournalJournal of Applied Physics
Volume75
Issue number5
DOIs
StatePublished - Dec 1 1994

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hydrogen plasma
electron cyclotron resonance
metals
passivity
hydrogenation
plots
etching
electric potential
hydrogen
deactivation
electrical measurement
ions
capacitance
recovery
illumination
insulators
conductivity
temperature
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Wang, Y. G. ; Ashok, S. / A study of metal/GaAs interface modification by hydrogen plasma. In: Journal of Applied Physics. 1994 ; Vol. 75, No. 5. pp. 2447-2454.
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A study of metal/GaAs interface modification by hydrogen plasma. / Wang, Y. G.; Ashok, S.

In: Journal of Applied Physics, Vol. 75, No. 5, 01.12.1994, p. 2447-2454.

Research output: Contribution to journalArticle

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