A study of oxygen content in GaN, AlN, and GaAlN powders

Jonathan H. Tao, Nestor Perea Lopez, Joanna McKittrick, Jan B. Talbot, Bing Han, Madis Raukas, Keith Klinedinst, Kailash C. Mishra

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3 Scopus citations

Abstract

A three-step solution-based method has been adopted and improved to synthesize AlN, GaAlN, and GaN powders with low oxygen content by sequential conversion of nitrates to hydroxides to fluorides and finally into nitrides. The synthesis parameters for rare-earth-activated AlN powders, high-purity single-phase GaN, and GaAlN were determined. Oxygen content of approximately 4 atom % in GaN as determined by energy-dispersive spectroscopy was achieved by optimizing the experimental process. X-ray diffraction observed single-phase AlN, GaN, and GaAlN powders; reflectance measurements indicated a slightly increased bandgap for the synthesized GaN powder with the highest purity compared to those with higher oxygen content, and the GaAlN powder with more incorporated aluminum.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume155
Issue number6
DOIs
StatePublished - May 9 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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    Tao, J. H., Perea Lopez, N., McKittrick, J., Talbot, J. B., Han, B., Raukas, M., Klinedinst, K., & Mishra, K. C. (2008). A study of oxygen content in GaN, AlN, and GaAlN powders. Journal of the Electrochemical Society, 155(6). https://doi.org/10.1149/1.2898869