A surprising result: “Bulk” SiC defects in the negative bias instability in 4H-SiC MOSFETs

Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We utilize electrically detected magnetic resonance and “on-the-fly” elevated temperature stressing to examine the effects of negative bias temperature stress on defects within the “bulk” SiC, that is, below the SiC/SiO2 interface. We observe generation of two temperaturedependent defects; one has a two (or three) line spectrum with lines separated by about 61 (30) Gauss when the SiC/SiO2 interface is perpendicular to the magnetic field and very slightly less, about 59 (30) Gauss when the SiC/SiO2 interface is parallel to the field. The second spectrum has a single line with zero-crossing g = 2.0118 when the magnetic field is nearly perpendicular to the SiC/SiO2 interface; the g-value drops to about 2.0016 with the field parallel to the SiC/SiO2 interface. We also observe strong evidence for hydrogen motion within the “bulk” SiC, as both spectra broaden significantly at elevated temperature, with broadening at both high and low fields and frequencies.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages513-517
Number of pages5
ISBN (Print)9783035710427
DOIs
StatePublished - Jan 1 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period10/4/1510/9/15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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