A three-terminal edge-triggered mott switch

Ahmedullah Aziz, Roman Engel-Herbert, Sumeet Kumar Gupta, Nikhil Shukla

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a novel VO2 based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO2 switch due to the absence of field-effect induced IMT in VO2. The ET Mott switch also enables isolation between the input the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45% 40% lower sneak-path current power, respectively.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2018-June
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

Fingerprint

Switches
Induced currents
Electric potential
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Aziz, A., Engel-Herbert, R., Gupta, S. K., & Shukla, N. (2018). A three-terminal edge-triggered mott switch. In 2018 76th Device Research Conference, DRC 2018 (Vol. 2018-June). [8442274] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442274
Aziz, Ahmedullah ; Engel-Herbert, Roman ; Gupta, Sumeet Kumar ; Shukla, Nikhil. / A three-terminal edge-triggered mott switch. 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018.
@inproceedings{0cb8bdc5051143ffb2f95234e90900ff,
title = "A three-terminal edge-triggered mott switch",
abstract = "We demonstrate a novel VO2 based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO2 switch due to the absence of field-effect induced IMT in VO2. The ET Mott switch also enables isolation between the input the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45{\%} 40{\%} lower sneak-path current power, respectively.",
author = "Ahmedullah Aziz and Roman Engel-Herbert and Gupta, {Sumeet Kumar} and Nikhil Shukla",
year = "2018",
month = "8",
day = "20",
doi = "10.1109/DRC.2018.8442274",
language = "English (US)",
isbn = "9781538630280",
volume = "2018-June",
booktitle = "2018 76th Device Research Conference, DRC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Aziz, A, Engel-Herbert, R, Gupta, SK & Shukla, N 2018, A three-terminal edge-triggered mott switch. in 2018 76th Device Research Conference, DRC 2018. vol. 2018-June, 8442274, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442274

A three-terminal edge-triggered mott switch. / Aziz, Ahmedullah; Engel-Herbert, Roman; Gupta, Sumeet Kumar; Shukla, Nikhil.

2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018. 8442274.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A three-terminal edge-triggered mott switch

AU - Aziz, Ahmedullah

AU - Engel-Herbert, Roman

AU - Gupta, Sumeet Kumar

AU - Shukla, Nikhil

PY - 2018/8/20

Y1 - 2018/8/20

N2 - We demonstrate a novel VO2 based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO2 switch due to the absence of field-effect induced IMT in VO2. The ET Mott switch also enables isolation between the input the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45% 40% lower sneak-path current power, respectively.

AB - We demonstrate a novel VO2 based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO2 switch due to the absence of field-effect induced IMT in VO2. The ET Mott switch also enables isolation between the input the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45% 40% lower sneak-path current power, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85053195561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053195561&partnerID=8YFLogxK

U2 - 10.1109/DRC.2018.8442274

DO - 10.1109/DRC.2018.8442274

M3 - Conference contribution

AN - SCOPUS:85053195561

SN - 9781538630280

VL - 2018-June

BT - 2018 76th Device Research Conference, DRC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Aziz A, Engel-Herbert R, Gupta SK, Shukla N. A three-terminal edge-triggered mott switch. In 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June. Institute of Electrical and Electronics Engineers Inc. 2018. 8442274 https://doi.org/10.1109/DRC.2018.8442274