Abstract
This paper presents a quantitative two-dimensional (2D) analysis on high power GaN light emitting diodes (LEDs) fabricated on asymmetric micro-structured substrates. It is found that the light extraction efficiency (LEE) can be substantially improved from conventional symmetric structure to asymmetric structure. The increase of LEE is mainly dedicated to the increased surface area and better randomization on the direction of transmitted/reflected light, which enhances the escaping probability after multiple reflections. This quantitative 2D analysis lays down a solid foundation for the future quantitative 3D analysis.
Original language | English (US) |
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Title of host publication | Photonic Fiber and Crystal Devices |
Subtitle of host publication | Advances in Materials and Innovations in Device Applications XI |
Editors | Shizhuo Yin, Ruyan Guo |
Publisher | SPIE |
Volume | 10382 |
ISBN (Electronic) | 9781510612211 |
DOIs | |
State | Published - Jan 1 2017 |
Event | Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017 - San Diego, United States Duration: Aug 6 2017 → Aug 7 2017 |
Other
Other | Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017 |
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Country/Territory | United States |
City | San Diego |
Period | 8/6/17 → 8/7/17 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering