A Two-Layer Microwave FET Structure for Improved Characteristics

Mukunda B. Das, Paul Esqueda

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.

Original languageEnglish (US)
Pages (from-to)757-761
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume24
Issue number6
DOIs
StatePublished - Jun 1977

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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