The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering