We theoretically investigate the valence band offsets (VBO’s) between silicon and crystalline oxides. Using the local density functional approximation, we calculate valence band offsets using standard interface methods, idealized surface ionization potentials and partial density of states. Between silicon (100) and strained model oxides the VBO is (formula presented) These results are (formula presented) lower than experimentally derived values for silicon-amorphous oxide junctions. In contrast, valence band offsets between silicon (100) and (formula presented) quartz are close to the experimental values. The implications of these results are discussed.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Apr 30 2003|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics