Absence of a Kosterlitz-Thouless transition in ultrathin films

J. Repaci, C. Kwon, Qi Li, Xiuguang Jiang, T. Venkatessan, R. Glover, C. Lobb, R. Newrock

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Abstract

We have performed nanovolt-level dc measurements on single-unit-cell films of (Formula presented). When only the low-sensitivity data are analyzed, they are roughly consistent with the occurrence of a Kosterlitz-Thouless transition. At the lowest currents and voltages, however, the samples are ohmic at temperatures quite far below the nominal Kosterlitz-Thouless transition temperature, contrary to the theory. The ohmic response at low currents implies that there are unbound vortices present well below the nominal Kosterlitz-Thouless transition temperature.

Original languageEnglish (US)
Pages (from-to)R9674-R9677
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number14
DOIs
StatePublished - Jan 1 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Repaci, J., Kwon, C., Li, Q., Jiang, X., Venkatessan, T., Glover, R., Lobb, C., & Newrock, R. (1996). Absence of a Kosterlitz-Thouless transition in ultrathin films. Physical Review B - Condensed Matter and Materials Physics, 54(14), R9674-R9677. https://doi.org/10.1103/PhysRevB.54.R9674