Absence of low-temperature phase transitions in epitaxial BaTiO3 thin films

D. A. Tenne, X. X. Xi, Y. L. Li, L. Q. Chen, A. Soukiassian, M. H. Zhu, A. R. James, J. Lettieri, D. G. Schlom, W. Tian, X. Q. Pan

Research output: Contribution to journalArticle

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Abstract

We have studied phase transitions in epitaxial BaTiO3 thin films by Raman spectroscopy. The films are found to remain in a single ferroelectric phase over the temperature range from 5 to 325 K. The low-temperature phase transitions characteristic of bulk BaTiO3 (tetragonal-orthorhombic- rhombohedral) are absent in the films. X-ray diffraction shows that the BaTiO3 films are under tensile strain due to the thermal expansion mismatch with the buffer layer. A phase-field calculation of the phase diagram and domain structures in BaTiO3 thin films predicts, without any priori assumption, that an orthorhombic phase with in-plane polarization is the thermodynamically stable phase for such values of tensile strain and temperature, consistent with the experimental Raman results.

Original languageEnglish (US)
Article number174101
Pages (from-to)174101-1-174101-5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number17
DOIs
StatePublished - May 1 2004

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Epitaxial films
Tensile strain
Phase transitions
Thin films
thin films
Buffer layers
Temperature
Ferroelectric materials
Phase diagrams
Thermal expansion
Raman spectroscopy
thermal expansion
buffers
phase diagrams
Polarization
X ray diffraction
temperature
polarization
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Tenne, D. A., Xi, X. X., Li, Y. L., Chen, L. Q., Soukiassian, A., Zhu, M. H., ... Pan, X. Q. (2004). Absence of low-temperature phase transitions in epitaxial BaTiO3 thin films. Physical Review B - Condensed Matter and Materials Physics, 69(17), 174101-1-174101-5. [174101]. https://doi.org/10.1103/PhysRevB.69.174101
Tenne, D. A. ; Xi, X. X. ; Li, Y. L. ; Chen, L. Q. ; Soukiassian, A. ; Zhu, M. H. ; James, A. R. ; Lettieri, J. ; Schlom, D. G. ; Tian, W. ; Pan, X. Q. / Absence of low-temperature phase transitions in epitaxial BaTiO3 thin films. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 17. pp. 174101-1-174101-5.
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Tenne, DA, Xi, XX, Li, YL, Chen, LQ, Soukiassian, A, Zhu, MH, James, AR, Lettieri, J, Schlom, DG, Tian, W & Pan, XQ 2004, 'Absence of low-temperature phase transitions in epitaxial BaTiO3 thin films', Physical Review B - Condensed Matter and Materials Physics, vol. 69, no. 17, 174101, pp. 174101-1-174101-5. https://doi.org/10.1103/PhysRevB.69.174101

Absence of low-temperature phase transitions in epitaxial BaTiO3 thin films. / Tenne, D. A.; Xi, X. X.; Li, Y. L.; Chen, L. Q.; Soukiassian, A.; Zhu, M. H.; James, A. R.; Lettieri, J.; Schlom, D. G.; Tian, W.; Pan, X. Q.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 17, 174101, 01.05.2004, p. 174101-1-174101-5.

Research output: Contribution to journalArticle

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AU - Tenne, D. A.

AU - Xi, X. X.

AU - Li, Y. L.

AU - Chen, L. Q.

AU - Soukiassian, A.

AU - Zhu, M. H.

AU - James, A. R.

AU - Lettieri, J.

AU - Schlom, D. G.

AU - Tian, W.

AU - Pan, X. Q.

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N2 - We have studied phase transitions in epitaxial BaTiO3 thin films by Raman spectroscopy. The films are found to remain in a single ferroelectric phase over the temperature range from 5 to 325 K. The low-temperature phase transitions characteristic of bulk BaTiO3 (tetragonal-orthorhombic- rhombohedral) are absent in the films. X-ray diffraction shows that the BaTiO3 films are under tensile strain due to the thermal expansion mismatch with the buffer layer. A phase-field calculation of the phase diagram and domain structures in BaTiO3 thin films predicts, without any priori assumption, that an orthorhombic phase with in-plane polarization is the thermodynamically stable phase for such values of tensile strain and temperature, consistent with the experimental Raman results.

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