Absence of low-temperature phase transitions in epitaxial BaTiO 3 thin films

D. A. Tenne, X. X. Xi, Y. L. Li, Long-qing Chen, A. Soukiassian, M. H. Zhu, A. R. James, J. Lettieri, D. G. Schlom, W. Tian, X. Q. Pan

Research output: Contribution to journalArticle

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Abstract

We have studied phase transitions in epitaxial BaTiO 3 thin films by Raman spectroscopy. The films are found to remain in a single ferroelectric phase over the temperature range from 5 to 325 K. The low-temperature phase transitions characteristic of bulk BaTiO 3 (tetragonal-orthorhombic- rhombohedral) are absent in the films. X-ray diffraction shows that the BaTiO 3 films are under tensile strain due to the thermal expansion mismatch with the buffer layer. A phase-field calculation of the phase diagram and domain structures in BaTiO 3 thin films predicts, without any priori assumption, that an orthorhombic phase with in-plane polarization is the thermodynamically stable phase for such values of tensile strain and temperature, consistent with the experimental Raman results.

Original languageEnglish (US)
Article number174101
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number17
DOIs
StatePublished - May 1 2004

Fingerprint

Tensile strain
Phase transitions
Thin films
thin films
Buffer layers
Temperature
Ferroelectric materials
Phase diagrams
Thermal expansion
Raman spectroscopy
thermal expansion
buffers
phase diagrams
Polarization
X ray diffraction
temperature
polarization
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Tenne, D. A. ; Xi, X. X. ; Li, Y. L. ; Chen, Long-qing ; Soukiassian, A. ; Zhu, M. H. ; James, A. R. ; Lettieri, J. ; Schlom, D. G. ; Tian, W. ; Pan, X. Q. / Absence of low-temperature phase transitions in epitaxial BaTiO 3 thin films In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 17.
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Tenne, DA, Xi, XX, Li, YL, Chen, L, Soukiassian, A, Zhu, MH, James, AR, Lettieri, J, Schlom, DG, Tian, W & Pan, XQ 2004, ' Absence of low-temperature phase transitions in epitaxial BaTiO 3 thin films ', Physical Review B - Condensed Matter and Materials Physics, vol. 69, no. 17, 174101. https://doi.org/10.1103/PhysRevB.69.174101

Absence of low-temperature phase transitions in epitaxial BaTiO 3 thin films . / Tenne, D. A.; Xi, X. X.; Li, Y. L.; Chen, Long-qing; Soukiassian, A.; Zhu, M. H.; James, A. R.; Lettieri, J.; Schlom, D. G.; Tian, W.; Pan, X. Q.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 17, 174101, 01.05.2004.

Research output: Contribution to journalArticle

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AU - Tenne, D. A.

AU - Xi, X. X.

AU - Li, Y. L.

AU - Chen, Long-qing

AU - Soukiassian, A.

AU - Zhu, M. H.

AU - James, A. R.

AU - Lettieri, J.

AU - Schlom, D. G.

AU - Tian, W.

AU - Pan, X. Q.

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N2 - We have studied phase transitions in epitaxial BaTiO 3 thin films by Raman spectroscopy. The films are found to remain in a single ferroelectric phase over the temperature range from 5 to 325 K. The low-temperature phase transitions characteristic of bulk BaTiO 3 (tetragonal-orthorhombic- rhombohedral) are absent in the films. X-ray diffraction shows that the BaTiO 3 films are under tensile strain due to the thermal expansion mismatch with the buffer layer. A phase-field calculation of the phase diagram and domain structures in BaTiO 3 thin films predicts, without any priori assumption, that an orthorhombic phase with in-plane polarization is the thermodynamically stable phase for such values of tensile strain and temperature, consistent with the experimental Raman results.

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