Accessing a growth window for SrVO3 thin films

Matthew Brahlek, Lei Zhang, Craig Eaton, Hai Tian Zhang, Roman Engel-Herbert

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Stoichiometric SrVO3 thin films were grown over a range of cation fluxes on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates using hybrid molecular beam epitaxy, where a thermal effusion cell was employed to generate a Sr flux and V was supplied using the metal-organic precursor vanadium oxytriisopropoxide (VTIP). By systematically varying the VTIP flux while keeping the Sr flux constant, a range of flux ratios were discovered in which the structural and electronic properties of the SrVO3 films remained unaltered. The intrinsic film lattice parameter and residual resistivity were found to be the smallest inside the growth window, indicating the lowest defect concentration of the films, and rapidly increased for cation flux ratios deviating from ideal growth condition. Reflection high-energy electron diffraction showed that films grown within this range had smooth surfaces and diffraction patterns were free of additional spots, while otherwise the growing surface was rough and contained additional crystalline phases. Results show the existence of a SrVO3 growth window at sufficiently high growth temperature, in which high-quality, stoichiometric films can be grown in a robust, highly reproducible manner that is invulnerable to unintentional flux variation.

Original languageEnglish (US)
Article number143108
JournalApplied Physics Letters
Volume107
Issue number14
DOIs
StatePublished - Oct 5 2015

Fingerprint

thin films
cations
high energy electrons
vanadium
lattice parameters
molecular beam epitaxy
diffraction patterns
electron diffraction
electrical resistivity
defects
cells
electronics
metals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Brahlek, Matthew ; Zhang, Lei ; Eaton, Craig ; Zhang, Hai Tian ; Engel-Herbert, Roman. / Accessing a growth window for SrVO3 thin films. In: Applied Physics Letters. 2015 ; Vol. 107, No. 14.
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Accessing a growth window for SrVO3 thin films. / Brahlek, Matthew; Zhang, Lei; Eaton, Craig; Zhang, Hai Tian; Engel-Herbert, Roman.

In: Applied Physics Letters, Vol. 107, No. 14, 143108, 05.10.2015.

Research output: Contribution to journalArticle

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