TY - JOUR
T1 - Accessing the mott regime in 2D optical lattices with strongly interacting fermions
AU - Khatami, Ehsan
AU - Rigol, Marcos
N1 - Funding Information:
Acknowledgements This work was supported by National Science Foundation under Grants No. OCI-0904597 and PHY05-51164. We and different characteristic densities. From left to right (A–D), the characteristic density decreases along the corresponding curve shown in the top√panel with the four different points identified by horizontal lines. ζ = 4t/V is the characteristic length thank A. Muramatsu, R.T. Scalettar, R.R.P. Singh, and K. Mikelsons for useful discussions.
PY - 2012/10
Y1 - 2012/10
N2 - We use numerical linked-cluster expansions to study finite-temperature properties of strongly interacting fermions in two-dimensional optical lattices, governed by the Hubbard model.We show the double occupancy and entropy for the infinite homogeneous system at temperatures significantly lower than those obtained by other exact methods at strong interactions. Employing a local density approximation, and using the high-precision results for the entropy, we study the density and nearest-neighbor spin correlation profiles of lattice fermions trapped in a harmonic potential during adiabatic processes. Starting with a trap that has a substantial band-insulator region at high temperatures, we show how one can access the Mott region at low temperatures by flattening the trapping potential.
AB - We use numerical linked-cluster expansions to study finite-temperature properties of strongly interacting fermions in two-dimensional optical lattices, governed by the Hubbard model.We show the double occupancy and entropy for the infinite homogeneous system at temperatures significantly lower than those obtained by other exact methods at strong interactions. Employing a local density approximation, and using the high-precision results for the entropy, we study the density and nearest-neighbor spin correlation profiles of lattice fermions trapped in a harmonic potential during adiabatic processes. Starting with a trap that has a substantial band-insulator region at high temperatures, we show how one can access the Mott region at low temperatures by flattening the trapping potential.
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U2 - 10.1007/s10948-012-1641-y
DO - 10.1007/s10948-012-1641-y
M3 - Article
AN - SCOPUS:84870242829
VL - 25
SP - 2145
EP - 2147
JO - Journal of Superconductivity and Novel Magnetism
JF - Journal of Superconductivity and Novel Magnetism
SN - 1557-1939
IS - 7
ER -