Accurate stacking effect macro-modeling of leakage power in sub-100nm circuits

Shengqi Yang, Wayne Wolf, N. Vijaykrishnan, Yuan Xie, Wenping Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Scopus citations

Abstract

An accurate and efficient stacking effect macro-model for leakage power in sub-100nm circuits is presented in this paper. Leakage power, including subthreshold leakage power and gate leakage power, is becoming more significant compared to dynamic power when technology scaling down below 100nm. Consequently, fast and accurate leakage power estimation models, which are strongly dependent on precise modeling of the stacking effect on subthreshold leakage and gate leakage, are vital for evaluating optimizations. In this work, making use of the interactions between subthreshold leakage and gate leakage, we focus our attention on analyzing the effects of transistor stacking on gate leakage between the channel and the gate and that between the drain/source and the gate. The contribution of the latter has been largely ignored in prior work, while our work shows that it is an important factor. Based on the stacking effect analysis, we have proposed a new best input vector to reduce the total leakage power; and an efficient and accurate leakage power estimation macro-model which achieves a mean error of 3.1% when compared to HSPICE.

Original languageEnglish (US)
Title of host publicationProceedings of the 18th International Conference on VLSI Design
Pages165-170
Number of pages6
DOIs
StatePublished - 2005
Event18th International Conference on VLSI Design: Power Aware Design of VLSI Systems - Kolkata, India
Duration: Jan 3 2005Jan 7 2005

Publication series

NameProceedings of the IEEE International Conference on VLSI Design
ISSN (Print)1063-9667

Other

Other18th International Conference on VLSI Design: Power Aware Design of VLSI Systems
CountryIndia
CityKolkata
Period1/3/051/7/05

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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