Achieving single domain relaxor-PT crystals by high temperature poling

Fei Li; Linghang Wang; Li Jin; Zhuo Xu; Shujun Zhang

doi:10.1039/c3ce42330a

Achieving single domain relaxor-PT crystals by high temperature poling

Fei Li, Linghang Wang, Li Jin, Zhuo Xu, Shujun Zhang

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In_0.5Nb_0.5)O₃-0.37Pb(Mg _1/3Nb_2/3)O₃-0.38PbTiO₃ (PIN-PMN-PT) crystals, the non-180°ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach. This journal is

Original language	English (US)
Pages (from-to)	2892-2897
Number of pages	6
Journal	CrystEngComm
Volume	16
Issue number	14
DOIs	https://doi.org/10.1039/c3ce42330a
State	Published - Apr 14 2014

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1039/c3ce42330a

Fingerprint Dive into the research topics of 'Achieving single domain relaxor-PT crystals by high temperature poling'. Together they form a unique fingerprint.

Cite this

@article{0df9320be0004dba8d043010629a97c8,

title = "Achieving single domain relaxor-PT crystals by high temperature poling",

abstract = "Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In0.5Nb0.5)O3-0.37Pb(Mg 1/3Nb2/3)O3-0.38PbTiO3 (PIN-PMN-PT) crystals, the non-180°ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach. This journal is",

author = "Fei Li and Linghang Wang and Li Jin and Zhuo Xu and Shujun Zhang",

year = "2014",

month = apr,

day = "14",

doi = "10.1039/c3ce42330a",

language = "English (US)",

volume = "16",

pages = "2892--2897",

journal = "CrystEngComm",

issn = "1466-8033",

publisher = "Royal Society of Chemistry",

number = "14",

}

TY - JOUR

T1 - Achieving single domain relaxor-PT crystals by high temperature poling

AU - Li, Fei

AU - Wang, Linghang

AU - Jin, Li

AU - Xu, Zhuo

AU - Zhang, Shujun

PY - 2014/4/14

Y1 - 2014/4/14

N2 - Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In0.5Nb0.5)O3-0.37Pb(Mg 1/3Nb2/3)O3-0.38PbTiO3 (PIN-PMN-PT) crystals, the non-180°ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach. This journal is

AB - Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In0.5Nb0.5)O3-0.37Pb(Mg 1/3Nb2/3)O3-0.38PbTiO3 (PIN-PMN-PT) crystals, the non-180°ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach. This journal is

UR - http://www.scopus.com/inward/record.url?scp=84896793722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896793722&partnerID=8YFLogxK

U2 - 10.1039/c3ce42330a

DO - 10.1039/c3ce42330a

M3 - Article

AN - SCOPUS:84896793722

VL - 16

SP - 2892

EP - 2897

JO - CrystEngComm

JF - CrystEngComm

SN - 1466-8033

IS - 14

ER -